Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for ration...

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the p...

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

The large signal characteristics of 1 m long -gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed. The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively. High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz. Large signal gain and power density values of ...

MBE Growth and Characterization of ZnTe and Nitrogen-doped ZnTe on GaAs(100) Substrates

DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE

We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. ...

multiple-active-regions grown by MBE on InP

High-quality InAlGaAs digital-alloy active regions using submonolayer superlattices were developed and employed in a 3-stage bipolar cascade multiple-active-region vertical cavity surface emitting laser (VCSEL) design. The photoluminescence intensity and linewidth of these active regions were optimized by varying the substrate temperature and digitization period. These active regions exhibit co...