بهینه سازی پارامترهای چاه کوانتمی مربعی نانوساختاری alxga1-xas-gaas با الگوریتم pso

Electronic structures of GaAs/AlxGa1-xAs quantum double rings

In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mix...

Exciton dynamics in GaAs/AlxGa1-xAs quantum wells

Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or r...

TIME RESOLVED VERTICAL TRANSPORT IN GaAs/ALxGa1-xAs SUPERLATTICES

Characteristics Study of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT

The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...

رشد براراستی لایه های GaAs/AlxGa1-xAs و بررسی مشخصات آنها

Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As: Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3), GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the furnace was SCI up With U. I"C/min al T=860°C. The firSI layer was grown at T=840°C and Ihe la sl one at T=827°C. The thi ckness were varied between 0.1 10 8,um b...

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Related Articles Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-ReadHall statistics: An application to oxide precipitates in silicon J. Appl. Phys. 111, 113709 (2012) Charge recombination in disordered neat polymer films under imbalanced excitation conditions studied using the recombination time of flight technique J. Appl. Phys. 111, 104510...