نتایج جستجو برای: zener diode

تعداد نتایج: 21983  

2013
Hala M. Abdel Mageed Ali M. El - Rifaie

--The electrical International System of Units (SI) are defined and realized as DC electrical quantities. National Institute for Standards (NIS), Egypt maintains the DC voltage unit by using the DC Josephson Voltage Standard (JVS) as a primary standard for DC voltage adding to eight zener diode reference standards as DC voltage secondary standards. The JVS is used to provide traceability of ele...

2014
H. Holmberg N. Lebedeva S. Novikov J. Ikonen P. Kuivalainen M. Malfait V. V. Moshchalkov

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

2005
H. Holmberg N. Lebedeva S. Novikov J. Ikonen P. Kuivalainen M. Malfait V. V. Moshchalkov

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

2005
P. Sankowski

The Landauer-Büttiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimen...

Journal: :Journal of the Experimental Analysis of Behavior 1965

1995

PRODUCT DESCRIPTION The AD688 is a high precision ±10 V tracking reference. Low tracking error, low initial error and low temperature drift give the AD688 reference absolute ±10 V accuracy performance previously unavailable in monolithic form. The AD688 uses a proprietary ion-implanted buried Zener diode, and laser-waferdrift-trimming of high stability thin-film resistors to provide outstanding...

Journal: :Transactions of the Society of Instrument and Control Engineers 1981

2008
Bryan Witherspoon

In digital or mixed-signal applications, there is a need to precisely regulate the voltage entering or exiting a circuit. The Zener diode has a unique property that offers a simple, low-cost solution to this problem. This application note discusses the implementation of this voltage regulator and its advantages and drawbacks.

2016
D. M. Di Paola M. Kesaria O. Makarovsky A. Velichko L. Eaves N. Mori A. Krier A. Patanè

Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonan...

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