— A low power wideband noise amplifier (LNA) for 1GHz to 10GHz wireless has presented for wireless application in this dissertation work. Low power wideband noise amplifier is design by using resistive shunt feedback, current reuse, gain flatting techniques, and inductive feedback technique. The high mobility electron transistors are used to improve the Noise Figure (NF) and scattering paramete...

A 50 to 550MHz wideband gallium nitride (GaN) HEMT power amplifier with over 43 dBm output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier’s output power and efficiency. To assur...

This Paper presents the design of a wideband variable gain amplifier (VGA) using 0.18 μm standard CMOS technology. The proposed VGA realizes wideband flat gain using wideband flat negative capacitance. It achieves a 3 dB gain bandwidth of 1 GHz with a maximum gain of 23 dB. Also, it shows P1 dB of −33 to −6 dBm over the gain range of −28 to 23 dB. The overall current consumption is 5.5 mA under...

In this paper, a low voltage ultra-wideband RF receiver for Software-Defined Radio (SDR) is presented. In SDR design, the radio frequency (RF) receiver should be able to receive signals over a broadbandwidth so that it can satisfy a variety of different communication standards. In the proposed design, working frequency ranging from 0.1GHz to 6GHz RF front-end for SDR, covering almost all of mat...

Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...

A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth and is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1...

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the hi...

Abstract The performance of a wireless communication system depends on amplifier’s nonlinearity. Adaptive feed-forward amplifier implementation for wideband communication system and a step by step design of power amplifier at 2.4 GHz are introduced. The Feedforward linearization and Adaptive feedforward technique is a well known power amplifier linearization method to reduce out-of band distort...

This paper introduces wideband low noise amplifier design for Long Term Evolution systems. The three-stage, cascade wideband low noise amplifier structure will be presented. The low noise amplifier (LNA) is design for uplink channels for LTE systems. The LNA is designed for LTE receiver front-end which operates in 700-1300 MHz frequency range, covering almost entire LTE uplink frequency band. W...

This paper describes the design of wideband low noise amplifier (LNA) for Motorola application which targeted to be applied in two-way communication mobile system architecture. The technical specification was deduced from the TIA-603C standard receiver system sensitivity and intermodulation. The proposed LNA exhibit low power consumption and adopts a negative feedback wideband amplifier topolog...