نتایج جستجو برای: wide band gap semiconductor

تعداد نتایج: 657012  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه رازی - دانشکده علوم 1387

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

Journal: :international journal of nano dimension 0
j. nouri department of chemistry, mahabad branch, islamic azad university, mahabad, iran t. khoshravesh department of chemistry, mahabad branch, islamic azad university, mahabad, iran s. khanahmadzadeh department of chemistry, mahabad branch, islamic azad university, mahabad, iran a. salehabadi department of chemistry, naragh branch ,islamic azad university, naragh, iran m. enhessari department of chemistry, naragh branch ,islamic azad university, naragh, iran

li2ni8o10 and limn2o4 nanoparticles as cathode materials of lithium ion battery, were successfully synthesized using lithium acetate, nickel and manganese acetate as li, ni and mn sources and stearic acid as a complexing reagent. the structure of the obtained products were characterized by ft-ir and xrd. the shape, size and distribution of the li2ni8o10 and limn2o4 nanoparticles were observed b...

Journal: :Journal of The Surface Finishing Society of Japan 2018

Journal: :international journal of bio-inorganic hybrid nanomaterials 0

cumn2o4 nanoparticles, a semiconducting materials with tunable functionalities in solid oxide fuel cell, was successfully synthesized via a sol-gel method using its respective metal cations sources i.e. cu2+ and mn2+ in an appropriate complexing agent.the vibrational frequencies below 1000 cm-1 of the obtained materials confirmed the formation of metal-oxygen (m-o:cu-o, mn-o) bond in the sample...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شاهد - دانشکده مهندسی برق و الکترونیک 1392

حلقه های قفل شده فاز تمام دیجیتال یکی از مباحث مهم در دنیای امروز الکترونیک هستند. حلقه قفل فازهای (pll ) که به وسیله روشهای آنالوگ طراحی می شدند نسبت به تغییرات دما و ولتاژ و پروسس حساس بودند. این امر موجب سختی طراحی و نیازمندی به طراحی مجدد در تکنولوژی های جدید می شود. این در حالی است که با استفاده از حلقه های قفل فاز تمام دیجیتال این مشکلات برطرف میشوند. حلقه های قفل فاز تمام دیجیتال (adpll...

Journal: :IOP Conference Series: Earth and Environmental Science 2017

2003
Leon M. Tolbert Burak Ozpineci S. Kamrul Islam Madhu S. Chinthavali

Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many utility applications of power electronics are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To o...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه پیام نور 1388

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