transfer matrix method (tmm) has been applied to analyze characteristics of semiconductor laser optical amplifiers. the input signal is sinusoidal modulating wave and we do not assume the modulating bias signal as well. we have shown that the distoration arises from gain modulation at low modulation frequencies, but in microwave modulation frequencies, the gain takes an average value and the re...

In this paper we have numerically analyzed terahertzrange wavelength conversion using nondegenerate four wave mixing (NDFWM) in a SOA integrated DFB laser (experiments reported both in MIT electronics and Fujitsu research laboratories). For analyzing semiconductor optical amplifier (SOA), we use finitedifference beam propagation method (FDBPM) based on modified nonlinear SchrÖdinger equation an...

A theory of four-wave mixing in semiconductor laser media is developed by considering the contributions of both the gain and index gratings created by the carrier-density modulation occurring at the beat frequency of the pump and the probe waves. The general formalism can be applied to semiconductor lasers operating below or above threshold. As an illustration, we consider the case in which the...

Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. As a preliminary...

LUDWIG, R., P I E P ~ , w., and WEBER, H. G.: ‘Photonic ATM switching with semiconductor laser amplifier gates’, Electron. Lett., 1992, 28, (15), pp. 1438-1439 SAXTOFT, c.: ‘Photonic packet switch experiment employing a 2 t 2 switch matrix and a semiconductor laser amplifier’. Proc. Photonic Switching Topical Meeting, Kobe, Japan, 1990, Postdeadline Paper 14B-7 4 FORTENBERRV, R. M., LOWERY, A. ...

Nano fabricated amplifier for semiconductor epitaxial laser A major challenge for building a widely tunable external cavity Mid-Infrared (MIR) laser using latest semiconductor epitaxial (epi) laser is to apply the Anti-Reflection (AR) coating that could turn the otherwise Fabry-Perot (FP) epi laser waveguide into an amplifier. As the epi laser waveguide are progressing rapidly in terms of tunin...

A tunable two-frequemcy high-power diode laser system at 850 nm for terahertz (Thz)wave generation by photomixing in lowtemperature-grown GaAs photo-conductors has been developed. The difference frequency is obtained through a three laser system, where two lasers are locked to different orders of a Fabry-Perot cavity and a third is offset-locked to the first, The difference-frequency signal is ...

Utilizing a tunable photonic crystal resonant reflector as a mirror of an external cavity laser cavity, we demonstrate a new type of label-free optical biosensor that achieves a high quality factor through the process of stimulated emission, while at the same time providing high sensitivity and large dynamic range. The photonic crystal is fabricated inexpensively from plastic materials, and its...