Philips recently released a new VCSEL and photodiode product family for the fast growing FDR InfiniBandTM generation. In this work we review the influence of production process variations on VCSEL characteristics, the FDR VCSEL transmission behavior as well as wear-out reliability characteristics. Data collected during an initial 15 wafers pilot production batch verify that FDR VCSEL manufactur...

We analyze theoretically the polarization dynamics in unidirectionally coupled vertical-cavity surface-emitting lasers (VCSELs). The master VCSEL is subject to an isotropic optical feedback. The slave VCSEL is subject to an orthogonal optical injection from the master VCSEL, i.e., only the linearly polarized mode orthogonal to the dominant linearly polarized mode of the free-running slave VCSEL...

In this work, an integrated single chip dual cavity VCSEL has been designed which comprises an electrically pumped 980 nm bottom VCSEL section fabricated using GaInAs/AlGaAs MQW active region and a 1550 nm top VCSEL section constructed using GaInAs/AlGaInAs MQW active region but optically pumped using half of the produced 980 nm light entering into it from the electrically pumped bottom cavity....

Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constants and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current ...

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAsand the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of ...

In the present work, a new vertical cavity surface emitting laser (VCSEL) structure employing combined oxide layer and single defect photonic crystal index guiding layer has been investigated for L-band optical fiber application. The basic design goal was to obtain photonic crystal VCSEL (PhC VCSEL) with the high power, high slop efficiency and low threshold that operate at 1.55-1.6μm wavelengt...

A vertical-cavity surface-emitting laser ~VCSEL! having a two-dimensional ~2-D! photonic crystal structure on its surface has been investigated for single-lateral-mode operation. We evaluated the effective index change of a VCSEL cavity introduced by a 2-D pattern. Our experimental results showed good agreement with a theoretical model in which the influence of a finite etching depth was taken ...

Introduction: Stable single fundamental mode operation of a laser has drawn attention for a variety of applications in short and mid-range high quality optical networks, such as local area networks (LAN) and storage area networks (SAN). For these purposes, vertical cavity surface-emitting lasers (VCSELs) have been considered as promising optical sources over distributed feedback lasers not only...

We report an electrically pumped hybrid cavity AlGaInAs-silicon long-wavelength VCSEL using a high contrast grating (HCG) reflector on a silicon-on-insulator (SOI) substrate. The VCSEL operates at silicon transparent wavelengths ~1.57 μm with >1 mW CW power outcoupled from the semiconductor DBR, and single-mode operation up to 65 °C. The thermal resistance of our device is measured to be 1.46 K...

We demonstrate, both theoretically and experimentally, a pseudo-random, two-dimensional optical phased array (OPA) concept based on tandem injection locking of 64-element vertical cavity surface emitting laser (VCSEL) arrays. A low cavity-Q VCSEL design resulted in an injection locking optical power of less than 1 μW per VCSEL, providing large OPA scaling potential. Tandem injection locking of ...