The DC characteristics of CNFETs are reasonably well understood, although optimization of devices is still being actively pursued, notwithstanding difficulties in large-scale fabrication. Although the subject of promising experiments [2,3], the frequency-dependent performance has yet to be studied thoroughly in theory, and this work takes a step in that direction. We seek to describe a small-si...

One of the key limits of high-frequency operation of bipolar transistors is the base transient time, which is proportional to the square of the base width when the base transport is dominated by diffusion. Consequently, high-frequency bipolar transistors tend to use thin bases (<100 nm) that results in a short base transient time and a high cut-off frequency fT. However, for high frequency oper...

Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resist...

Charge injection transistors have been implemented in molecular-beam-epitaxy-grown InGaAs/InALAs/InGaAs and InGaAs/InPDnGaAs heterosuuctures using a selfaligned process for the collector stripe definition. Scattering parameters have been measmd in the frequency range from 100 MHz to 40 GHz. InP-banier devices show the best microwave performance ever reported for a real-space transfer transistor...

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed the help Sentaurus TCAD. By varying various device parameters, analog/RF performance proposed TMGS-GCDG-JL s-Si evaluated in terms transconductance-generation-factor (TGF), early...

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness, channel...

Using inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 mm gate-length enhancement-mode (E-mode) AlGaN=GaN high electron mobility transistors (HEMTs) were fabricated. These 1 mm gate-length devices exhibited maximum drain current density of 470 mA=mm, extrinsic transconductance of 248 mS=mm and threshold voltage of 75 mV. These characteristics are much higher than previously...

In this paper a simulation study is used to investigate the RF performance of surrounding gate (SRG) MOSFET. The effect of nonsymmetrical gate structure caused by nonideality in fabrication process has also been taken care into consideration. The important RF figure-ofmerits such as unity-gain cut-off frequency fT and maximum operating frequency fMAX are studied with the help of a 2D device sim...

Extensive process and device simulations are performed to investigate the nonquasi-static transition frequency (fNQS) behaviour of the NMOSFETs at different technology nodes, 0.5 μm to 90 nm, having same off-state leakage current (IOFF). These studies are done with and without supply voltage scaling. fNQS exhibits a turnaround in the 100 nm regime when we do the supply voltage scaling along wit...