نتایج جستجو برای: ultra thin film

تعداد نتایج: 240251  

Journal: :journal of nanostructures 2012
a. bahari

the main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. the obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...

علی بهاری, , ماندانا رودباری, , مونا امیرصادقی, , کبرا حسن زاده, ,

 We have grown TiO2 and AlN under ultra high vacuum and high pressure conditions and studied their structures with using AES and SEM techniques. The obtained results show that an amorphous film of TiO2 and AlN could be formed on silicon substrate. Furthermore, TiO2 and AlN are high – K dielectric materials and they can thus be replaced to ultra thin gate oxide film.

The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...

2015
James S. Harris

The Harris group proposed to develop significantly higher efficiency thin film multi-junction solar cells by combining multi-junctions and advanced nano-scale light management concepts in ultra-thin film devices that lend themselves to very large scale, low cost manufacturing. In the past year, they developed thin-film nanostructured solar cell modeling, epitaxial growth and fabrication. A nano...

Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric ...

Journal: :Optics express 2010
Weiqiang Chen Mark D Thoreson Satoshi Ishii Alexander V Kildishev Vladimir M Shalaev

We demonstrate a method to fabricate ultra-thin, ultra-smooth and low-loss silver (Ag) films using a very thin germanium (Ge) layer as a wetting material and a rapid post-annealing treatment. The addition of a Ge wetting layer greatly reduces the surface roughness of Ag films deposited on a glass substrate by electron-beam evaporation. The percolation threshold of Ag films and the minimal thick...

2009
Teppei Onuki Hiroki Kuwano

A thin film process using ECR-ion beam sputtering with ultra pure (99.999999%) copper target was investigated for improving transportation properties in the film. The electric resistivity of the thin film was 40% lower than that of using a commercial-grade purity target. And the optical qualities evaluated by the transmission and reflection spectrum measurements were also indicate slower relaxa...

2006
v. j. logeeswaran m. - l. chan y. bayam m. saif islam d. a. horsley w. wu s. y. wang r. s. williams

We present a mechanical pressing technique for generating ultra-smooth surfaces on thin metal films by flattening the bumps, asperities, rough grains and spikes of a freshly vacuum deposited metal film. The method was implemented by varying the applied pressure from 100 MPa to 600 MPa on an e-beam evaporated silver film of thickness 1000 Å deposited on double-polished (100)-oriented silicon sur...

2005
Isaac Lauer

Thin-body MOSFET geometries such as fully-depleted SO1 and double-gate devices are attractive because they can offer superior scaling properties compared to bulk and thick-body SO1 devices. The electrostatics of a MOSFET limit how short of a gate length can be achieved before the gate loses control over the channel. In bulk-like devices, the device designer keeps the gate in control with gate o...

2016
M Lyatti R Dunin-Borkowski

Nanostructuring of YBa2Cu3O7-x films is a challenging task on a way to the high-quality YBa2Cu3O7-x nanodevices because of the sensitivity of YBa2Cu3O7-x thin films to the patterning process. In this work we report on a "cold" nanopatterning procedure used for the structuring of the ultra-thin YBa2Cu3O7-x films by focused ion beam etching with a specially developed protection layer, which can b...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید