The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a str...

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...

We study the localized magnetic states of an impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene shows mixed features of Dirac and conventional fermions. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is a...

Trilayer graphene is of particular interest to the 2D materials community because of its unique tunable electronic structure. However, to date, there is a lack of fundamental understanding of the properties of epitaxial trilayer graphene on silicon carbide. Here, following successful synthesis of large-area uniform trilayer graphene, atomic force microscopy (AFM) showed that the trilayer graphe...

We report the results of a theoretical study of graphene/BN/graphene and BN/graphene/BN trilayers using the van-der-Waals-corrected density functional theory in conjunction with the non-equilibrium Green's Function method. These trilayer systems formed from graphene and BN exhibit distinct stacking-dependent features in their ground state electronic structure and response to an applied electric...

The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...

Graphene is a single 2-dimensional atomic layer of hexagonally packed carbon atoms. Graphene has a unique combination of thermal, mechanical, and electronic properties, making it a useful tool for learning new physics as well as a material with high potential for applications. Bilayer graphene (2LG) and trilayer graphene (3LG) share many of the interesting properties of its monolayer relative, ...

Strain, bending rigidity, and adhesion are interwoven in determining how graphene responds when pulled across a substrate. Using Raman spectroscopy of circular, graphene-sealed microchambers under variable external pressure, we demonstrate that graphene is not firmly anchored to the substrate when pulled. Instead, as the suspended graphene is pushed into the chamber under pressure, the supporte...

The electronic structure of epitaxial monolayer, bilayer, and trilayer graphene on Ru(0001) was determined by selected-area angle-resolved photoelectron spectroscopy (micro-ARPES). Micro-ARPES band maps provide evidence for a strong electronic coupling between monolayer graphene and the adjacent metal, which causes the complete disruption of the graphene pi-bands near the Fermi energy. However,...

The electronic, optical, and mechanical properties of bilayer and trilayer graphene vary with their structure, including the stacking order and relative twist, providing novel ways to realize useful characteristics not available to single layer graphene. However, developing controlled growth of bilayer and trilayer graphene requires efficient large-scale characterization of multilayer graphene ...