A characteristic loop locus of dc power versus RF output power was observed as the frequency was varied around the optimum point of an operational active antenna. A new technique was introduced into the simulation, plotting the dependence of parameters such as supply current, efficiency or output power on internal impedance as seen by the naked transistor. It is now clear that the loop was form...

This paper describes the Differential Pass Transistor Pulsed Latch (DPTPL) which enhances D-Q delay and reduce power consumption using NMOS pass transistors and feedback PMOS transistors. The proposed flip-flop uses the characteristic of stronger drivability of NMOS transistor than that of transmission gate if the sum of total transistor width is the same. Positive feedback PMOS transistors enh...

This paper describes the Differential Pass Transistor Pulsed Latch (DPTPL) which enhances D-Q delay and reduces power consumption using NMOS pass transistors and feedback PMOS transistors. The proposed flip-flop uses the characteristic of stronger drivability of NMOS transistor than that of transmission gate if the sum of total transistor width is the same. Positive feedback PMOS transistors en...

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

Graphene field-effect transistors are recognized as a potential alternative to metal-oxide-semiconductor and can become new element base in the post-silicon epoch. Increasing efficiency of graphene electronic devices simplifying their manufacturing technology important R&D areas. New technical solutions related development proposed paper. A reduced oxide (RGO) film was used conducting chann...