The transition metal nitrides like titanium nitride exhibit very interesting color variation properties depending on the different plasma deposition conditions using cylindrical magnetron sputtering method. It is found in this deposition study that nitrogen partial pressure in the reactive gas discharge environment plays a significant role on the color variation of the film coatings on bell-met...

The purpose of this investigation was to develop a coating technique and to study the characteristics of titanium–aluminum nitride [(Ti,Al)N] films deposited on a base-metal alloy (Wiron88R) substrate. Titanium–aluminum nitride thin films were deposited on the alloy surface using a reactive radiofrequency sputtering method. The electrochemical properties of three specimens with and without coat...

Ti-6Al-4V alloy attracting attention as a biomaterial features excellent mechanical properties and corrosion resistance, and super plasticity, so enables the forming of denture bases of complicated shapes. However, this alloy contains aluminum and vanadium liable to do serious harm to human bodies [1,2], so actual use will require prevention of direct contact with biological tissues. In our pre...

The pure elements Ti, Zr, Cr, Nb were selected to produce an TiCrZrNb alloy target and deposited thin films thereof by a reactive high vacuum DC sputtering process. Nitrogen was used as the reactive gas to deposit the nitride thin films. The effect of nitriding on the properties of the TiCrZrNbNx film was tested by changing the nitrogen ratio of the atmosphere. All of the as-deposited TiCrZrNbN...

Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on ...

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-cobithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A ...

A novel and facile approach has been developed to synthesize thin films of magnetite (Fe(3)O(4)) with epitaxial needle-like columnar grains on titanium nitride (TiN) buffered substrate using DC magnetron reactive sputtering. TiN buffer layer was first sputtered onto a substrate at 550 °C as a preferable substrate for growth following sputtering of epitaxial crystalline Fe(3)O(4) at 300 °C. The ...

A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl ammonium hydroxide (TMAH) of 25 wt.% solution is used as an etching solution for the AlN thin film...

Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their che...

By means of thin film technology a reduction of size, cost, and power consumption of electronic circuits can be achieved. The required specifications are attained by proper design and combinations of innovative materials and manufacturing technologies. This thesis focuses on the development and fabrication of low-loss ceramic thin film devices for radio and microwave frequency applications. The...