cu-mo and cu-ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. the effects of process parameters such as film thickness, annealing duration and temperat...

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 8C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current–voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloyin...

The electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au ~30 nm/100 nm/30 nm/30 nm! multilayer Ohmic contacts to n-GaN ~doping level 5310 cm) were studied. The lowest contact resistivity derived from the annealed contact was rS53.0310 V cm. The contacts were robust and showed high-thermal stability. X-ray diffraction and Auger electron spectroscopy studies were made to invest...

The intermetallic TiAl3 has been used as a thermally stable cap for Ti/Al ohmic contacts to n-GaN. The electrical performance of the TiAl3-capped contact is nearly the same as that of a standard Ti/Al/Ni/Au contact processed on the same substrate, but the Ti/Al/TiAl3 contact’s performance is optimized at a much lower temperature. The Ti/Al/TiAl3 contact achieved a lowest specific contact resist...

Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. The effects of process parameters such as film thickness, annealing duration and temp...

We have fabricated organic-inorganic hybrid perovskite solar cell that uses a Ti/Au multilayer as cathode and does not use electron transport materials, and achieved the highest power conversion efficiency close to 13% with high reproducibility and hysteresis-free photocurrent curves. Our cell has a Schottky planar heterojunction structure (ITO/PEDOT:PSS/perovskite/Ti/Au), in which the Ti inser...

PURPOSE Contact and distance osteogenesis occur around all endosseous dental implants. However, the mechanisms underlying these processes have not been fully elucidated. We hypothesized that these processes occur independently of each other. To test this, we used titanium (Ti) tubes to physically separate contact and distance osteogenesis, thus allowing contact osteogenesis to be measured in th...

Tungsten metal layer was used for the first time as an effective diffusion barrier for the standard Ti/Al/Ti/Au ohmic metallization scheme to obtain thermally stable ohmic contact suitable for high temperature applications. Comparative studies were performed on three distinct metallization schemes: 1) standard GaN/Ti/Al/Ti/Au, 2) GaN/Ti/Al/W/Au, and 3) GaN/Ti/Al/Ti/W/Au. For the GaN with doping...

Abstract Today gold is used as contact material on electric contacts for low current applications. Gold, however, has low wear resistance, is expensive and environmentally stressful to produce. An alternative contact material to gold is nano composite Ti-Si-C-Ag deposited with DC-magnetron sputtering. Nano composite Ti-Si-C-Ag has so far been deposited by a compound Ti-Si-C sputter target with ...

PURPOSE To test the mechanical stability and histologic osseointegration under load-bearing conditions of 2 different materials, pyrocarbon (Py) and titanium (Ti), in a rabbit model. METHODS Proximal interphalangeal implants (9 Ti, 8 Py) were placed into rabbit knees and the animals were killed after 3 months. Subsidence was assessed by monthly x-rays. Mechanical stability was measured with a...