نتایج جستجو برای: thermodynamicbinding parameters

تعداد نتایج: 578535  

پایان نامه :دانشگاه بین المللی امام خمینی (ره) - قزوین - دانشکده علوم پایه 1392

in this thesis,spin dependend transport and electron transport through of ng/sg(graphene/ superconductor graphen) are studied in the junction of ng/fgt/sg. due to andreev reflection conductance increases in the presence of superconductor graphene.also, by applying a voltage gate on a superconductor, fermi level shifts and the conductance is independent of ferromagnatic substrate. also, the cond...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه بیرجند - دانشکده کشاورزی 1390

abstract this study is carried out to determine the chemical composition in the three vegetative stages of the haloxylon sp., degradation parameters, with adding naoh and ca(oh2 ). for this purpose, in may and october and january 2010 enough some haloxylon sp. of the ammary area was prepared. crude protein and ash percentage are decrease, neutral detergent fiber percentage with pragress stage ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه بیرجند - دانشکده علوم 1391

in this thesis, we consider a mathematical model of cancer with completely unknown parameters. we study the stability of critical points which are biologically admissible. then we consider a control on the system and introduce situations at which solutions are attracted to critical points and so the cancer disease has auto healing. the lyapunov stability method is used for estimating the un...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه بیرجند 1389

there has been a gradual shift of focus from the study of rule systems, which have increasingly been regarded as impoverished, … to the study of systems of principles, which appear to occupy a much more central position in determining the character and variety of possible human languages. there is a set of absolute universals, notions and principles existing in ug which do not vary from one ...

2007
H. Kolanoski

Using the ARGUS detector at the e+e storage ring DORIS II, we have measured the Michel parameters , , and for ! l  decays in -pair events produced at center of mass energies in the region of the resonances. Using ! as spin analyzing tags, we nd e = 0:68 0:04 0:08, e = 1:12 0:20 0:09, e = 0:57 0:14 0:07, = 0:69 0:06 0:08, = 1:25 0:27 0:14 and = 0:72 0:18 0:10. In addition, we report the combine...

1999
Rahul Mukerjee

In the presence of nuisance parameters, we derive an explicit higher order asymptotic formula to compare the expected lengths of conndence intervals given by likelihood ratio statistics arising from the usual proole likelihood and various adjustments thereof. Highest posterior density regions, with approximate frequentist validity, are also included in the study.

2013
Thomas S. Shively Stephen G. Walker

For hypotheses of the type H0 : θ = θ0 vs H1 : θ 6= θ0 we demonstrate the equivalence of a Bayesian hypothesis test using a Bayes factor and the corresponding classical test, for a large class of models, which are detailed in the paper. In particular, we show that the role of the prior and critical region for the Bayes factor test is only to specify the type I error. This is their only role sin...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی خواجه نصیرالدین طوسی - دانشکده علوم 1391

abstract in the present research solution of chalcopyrite in sulfuric acid in hydrometallurgy method using electrochemistry with cyclic voltammetry technique has been investigated. the value of maximum reduction peak current of copper ions represents the measure of solubility. in this research different parameters temperature, potential, potential exert time, chalcopyrite concentration, sulfur...

2007
Maria Drakaki Alkis A. Hatzopoulos Stylianos Siskos Dimitrios K. Papakostas

— Various model parameter calculation equations of RF CMOS inductors are compared. The calculation equations are using as variables either Y, Z-parameters or S-parameters. Results are based on on-wafer RF S-parameter measurements of a 3.75 turn spiral inductor fabricated in AMIS 0.7 μm CMOS DM1P n-well technology. Results obtained with calculation equations for a differentially driven inductor ...

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