We report on a correlation between a deep hole trap observed by TSC (Thermally Stimulated Current) and the so-called reverse annealing effect of the effective doping concentration in neutron-irradiated silicon detectors.

The paper investigates the dependence of charging process on the dielectric charging of radiation induced defects in Si3N4 and SiO2 dielectric films, which are used in RF-MEMS switches. The radiation has been performed with 5 MeV alpha particles. The assessment has been carried out in Metal-Insulator-Metal capacitors with the thermally stimulated depolarization currents and discharge current tr...