In the thermochemical process of low-carbon steel nitridation, improvements of mechanical properties are governed by the nature (hardness, thickness, etc.) of the compound layer since the compound layer will be kept under working conditions. Because of low nitrogen diffusivity in steel and low mass transfer between gaseous reaction and steel, long duration and high temperature are classically u...

Our study proposes in situ synthesis of cold-rollable aluminum nitride (AlN) reinforced aluminum matrix composites with attractive thermal properties via arc plasma-induced accelerated volume nitridation (APAVN). Within three minutes of repeated APAVN using commercial nitrogen gas, volume fraction of AlN increased up to 40 vol%, which is the highest value ever reported by in situ nitridation of...

since the introduction of engine-driven nickel-titanium (niti) instruments, attempts have been made to minimize or eliminate their inherent defects, increase their surface hardness/flexibility and also improve their resistance to cyclic fatigue and cutting efficiency. the various strategies of enhancing instrument surface include ion implantation, thermal nitridation, cryogenic treatment and el...

Optimization of Thin, Nitrogen-Rich Silicon Oxynitrides Grown by Rapid Thermal Nitridation A. Ludsteck, J. Schulze, I. Eisele, W. Dietl, H. Chung, Z. Nenyei,* A. Bergmaier, and G. Dollinger Institute of Physics, EIT, Universität der Bundeswehr München, 85577 Neubiberg, Germany Mattson Thermal Products GmbH, 89160 Dornstadt, Germany Department of Physics, Technische Universität München, 85747 Ga...

Plasma-assisted oxidation, anodization, and nitridation of silicon have been performed in microwave, rf, and dc plasmas with a variety of reactor configurations and a range of plasma densities. Compared to thermal processes at equivalent substrate temperatures, film growth rates are accelerated by the plasma-enhanced generation of reactive chemical species or by the presence of electric fields ...

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that t...

Si (100) substrates were oxynitrided with nitrogen plasma exposure, at different conditions, followed by thermal oxidation in dry O 2 without using any harmful or global warming gas. Atomic concentration of N to Si was 7.5% for plasma discharge power of 0.5kW and exposure time of 1min. While, it was 17.6% for plasma power of 2.0kW and 3min, as depicted from X-ray photoelectron spectroscopy (XPS...

the monolithic oxynitride glasses in sio2-al2o3-b2o3 system were synthesized using sol-gel method. the porous, dried gels were heated in flowing ammonia for different times and varying temperatures. the nitrogen content of the oxynitride glasses was determined using an oxygen-nitrogen analyzer. the chemical bonding state and properties of glasses were investigated by means of fourier transform ...

(Oxy)nitride materials have attractive properties directly related to the role played by nitrogen. A commonly used synthesis method consists of the thermal nitridation of an oxide precursor in flowing ammonia. As a consequence of the anionic N3-/O2substitution results an increase in the covalent character, illustrated by a shift of the absorption edge towards higher wavelength values. Thus, oxy...

Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in th...