in this experimental work the pressure induced phase transformation of silicon and germaniumhas been studied. it was shown that at a particular value of applied pressure, (pt), depending on the sampletemperature, the electrical resistance of the specimen falls off to a metallic state. the main goal of this studywas to find out how the phase transformation pressure, pt, for a p-type silicon vari...

We study temperature dependence of diagonal conductivity at half filled Landau level by means of the theory of composite fermions in the weakly disordered regime (kF l >> 1). At low temperatures we find the leading log T correction resulting from interference between impurity scattering and gauge interactions of composite fermions. The prefactor appears to be strongly enhanced as compared to th...

On the T −dependence of the magnetic penetration depth in unconventional superconductors at low temperatures: can it be linear? Abstract We present a thermodynamics argument against a strictly linear temperature dependence of the magnetic penetration depth, which applies to superconduc-tors with arbitrary pairing symmetry at low temperatures.

Motivated by the possibility to load multicolor fermionic atoms in optical lattices, we study the entropy dependence of the properties of the one-dimensional antiferromagnetic SU(N) Heisenberg model, the effective model of the SU(N) Hubbard model with one particle per site (filling 1/N) in the large U/t limit. Using continuous-time world-line Monte Carlo simulations for N=2-5, we show that char...

This experiment was undertaken to investigate whether the half life of the β-decay of Au in a metallic environment showed any dependence on temperature as had been claimed in a recent publication [1]. An article describing this experiment has already been published [2]. Previous publications claiming to observe a temperature dependence of β-decay half-lives [1, 3, 4] have invoked the so-called ...

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

The 1∕f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn-model. For some devices, evidence of ...

We report an experimental approach to separate temperature dependent reversible and irreversible contributions to the perpendicular magnetic anisotropy of Fe films grown at low temperatures on Cu(001) substrates. The surface anisotropy K(S)(T) is found to decrease linearly with temperature, causing a thermally induced spin reorientation into the plane. The irreversible shift of the spin reorien...