convexity theory and duality theory are important issues in math- ematical programming. within the framework of credibility theory, this paper rst introduces the concept of convex fuzzy variables and some basic criteria. furthermore, a convexity theorem for fuzzy chance constrained programming is proved by adding some convexity conditions on the objective and constraint functions. finally,...

background: aflatoxin m1 (afm1) is a toxic compound that could be found in milk and dairy products. afm1 is the principle hydroxylated derivative of aflatoxin b1 (afb1), formed in liver and excreted into the milk in the mammary glands of both human and lactating animals that have been fed with afb1 contaminated diet. to the best of our knowledge, there is no report on stability of afm1 during p...

We consider stochastic programming problems with probabilistic con straints involving integer valued random variables The concept of a p e cient point of a probability distribution is used to derive various equivalent problem formula tions Next we introduce the concept of r concave discrete probability distributions and analyse its relevance for problems under consideration These notions are us...

Background: Aflatoxin M1 (AFM1) is a toxic compound that could be found in milk and dairy products. AFM1 is the principle hydroxylated derivative of aflatoxin B1 (AFB1), formed in liver and excreted into the milk in the mammary glands of both human and lactating animals that have been fed with AFB1 contaminated diet. To the best of our knowledge, there is no report on stability of AFM1 during p...

Using continuum elastic theory, we show that strain anisotropy removes the shape instability existing for an isotropically strained island. An anistropically strained island has always an anisotropic shape, elongating along the less-strained direction and adopting a narrow width in the more-strained direction. The sign of strain makes only a quantitative difference without changing the qualitat...

The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...

Deep submicron strained-Si n-MOSFET’s were fabricated on strained Si/relaxed Si0 8Ge0 2 heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices ...

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by ∼2/3 when the active region is scaled from Lactive=0.4 μm to 0.1 μm. Mobility can be lower by 50 % for narrow active widths resulting from the strain relaxation. The strain relaxati...