The majority of semiconductor devices are built on silicon wafers. Manufacturing of high quality silicon wafers involves several machining processes including grinding. This review paper discusses historical perspectives on grinding of silicon wafers, impacts of wafer size progression on applications of grinding in silicon wafer manufacturing, and interrelationships between grinding and two oth...

Chemical and crystallographic defects are a reality of solar grade silicon wafers and industrial production processes. Long overlooked, phosphorus as a dopant in silicon wafers is an excellent way to mitigate recombination associated with these defects. This paper details the connection between defect recombination and solar cell terminal characteristics, for one specific case of high hole life...

The Subsurface Damage (SSD) in silicon wafers induced by any mechanical material-removal processes has to be removed by subsequent processes. Therefore, the measurement of SSD is critically important for cost-effective manufacturing of silicon wafers. This review paper presents several Non-Destructive Evaluation (NDE) methods for SSD in silicon wafers, including X-ray diffraction, micro-Raman s...

Silicon wafers are used as substrates to build more than 90% of integrated circuits. One of the manufacturing processes for silicon wafers is grinding. This paper reports the investigations of silicon wafer grinding using Finite Element Analysis (FEA). FEA models are first used to study the effects of process parameters on waviness reduction in the grinding of wire-sawn wafers on a rigid chuck....

in this experimental work, by using the method of plasma-chemical etching, we have dealtwith the causes of the creation of a distorted layer on the surface of silicon wafers during mechanicalmachining processes, in addition, the elucidation of connections between the structure of this layer andcharacteristic parameters of the mechanical strength of these wafers have been studied. experimentalre...

This paper presents the fabrication, modeling, characterization and analysis of silicon-embedded, aircore, three-dimensional toroidal inductors for power converter applications. The inductors are fabricated within deep silicon recesses by means of a 3-D silicon shadow mask coupled with electroplating techniques. The losses in the inductor and the surrounding silicon are analytically modeled usi...

We report observations of microstructural changes in {100} and {110} oriented silicon wafers during initial lithiation under relatively high current densities. Evolution of the microstructure during lithiation was found to depend on the crystallographic orientation of the silicon wafers. In {110} silicon wafers, the phase boundary between silicon and LixSi remained flat and parallel to the surf...

Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...

Silicon wafers are the primary semiconductor substrates used to fabricate Integrated Circuits (ICs). Recently, the industry is making a transition from 200 to 300 mm wafers. To attain very flat 300 mm silicon wafers, grinding has been used to flatten the wire-sawn wafers. However, it is challenging for grinding to remove the waviness induced in wire sawing. To enhance the waviness removal abili...

Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...