geometrical structure, nuclear magnetic resonance (n1,1it) chemical shielding tensors, and chemical shiftsof silicon and carbon nucler are investigated for twn infinite size zigzag and armchair single-walled siliconcarbide nanotabes (sicnts). geometrical structures of sients, sit bonds and bond angles of st and cvertices in both zigzag and armchair nanotubes, indicate that bond lengths are appr...

A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can be exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a dif...

Lodging is a phenomenon that affects most of the cereal crops including rice, Oryza sativa. This is due to the fragile nature of herbaceous plants whose stems are non-woody, thus affecting its ability to grow upright. Silicon (Si), a beneficial nutrient is often used to toughen and protect plants from biotic and abiotic stresses. Deposition of Si in plant tissues enhances the rigidity and stiff...

Integrated optics and Optical computing are now a mature technology offering many types of devices and manufacturing techniques. Recent breakthroughs in the field of silicon photonics showed low-loss insulators, passive wave guide devices, high speed optical switches, detectors, silicon lasers, and silicon amplifiers, optical amplifiers etc. These devices have provided the possibility to constr...

We introduce a simulation technique suitable to model the tunneling leakage current in the metal(polySi)/CaF2/Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of the CaF2/Si tunnel barrier. The results obtained for the case of near-equilibrium carrier transport are in a good agreement with experimental data a...

V. A. Sverdlov, O. Baumgartner, S. Tyaginov, Th. Windbacher and S. Selberherr 1 Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria 2 V. A. Fock Institute of Physics, Universitu of St Petersburg, Ulyanovskaya 1, 198904 Petrodvorets, St Petersburg, Russia 3 Christian Doppler Laboratory for TCAD at the Institute for Microelectronics,TU Wien, Gußhausstraße 27-29, A-1...

In this work, for the first time, the electrical and thermal characteristics of strained Si/SiGe nanoscale n type metal–oxide–silicon field-effect transistors (MOSFETs) with silicon-on-aluminum nitride (SOAN) substrate are investigated by ISE TCAD. This novel structure is named as SGSOAN nMOSFET. A comparative study of self-heating effect (SHE) of nMOSFETs fabricated on SGOI and SGSOAN are pres...

Three-dimensional integrated circuits (3D-ICs), which contain multiple layers of active devices, have the potential to dramatically enhance chip performance, functionality, and device packing density. They also provide for microchip architecture and may facilitate the integration of heterogeneous materials, devices, and signals and offer a promising solution for reducing both silicon footprint ...

128 978-3-901578-29-8 Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr Christian Doppler Laboratory for High Performance TCAD at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria Institute of Discrete Mathematics and Geometry, TU Wie...

Welcome to the latest issue of TCAD News. Over the years, TCAD has proven to be an enabling methodology for reducing technology development costs and time. The use of TCAD, however, extends beyond nanoscale silicon CMOS devices. In this issue, I am delighted to present articles showing the wide application of TCAD tools for modeling and analyzing physical phenomena and effects beyond nanoscale ...