germanium nanowires (genws) were synthesized using chemical vapor deposition (cvd) based on vapor–liquid–solid (vls) mechanism with au nanoparticles as catalyst and germanium tetrachloride (gecl4) as a precursor of germanium. au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in au colloidal solution, wh...

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that can be built using existing CMOS fabrication facilities offers the tantalizing prospect of a scalable and cost-efficient solution to replace electrical interconnects. Silicon, ...

Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in sil...

Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative...

Recently we have demonstrated a process for generating uniaxial tensile strain in silicon. In this work, we generate uniaxially strained silicon and anisotropically strained silicon germanium on insulator with strain in both 100 and 110 in-plane directions. The strain is uniform over fairly large areas, and relaxed silicon-germanium alloy buffers are not used. The magnitude of uniaxial strain g...

A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...

The paper reviews the polyanionic hexagons of silicon and germanium, focusing on aromaticity. The chair-like structures of hexasilaand hexagermabenzene are similar to a nonaromatic cyclohexane (CH2)6 and dissimilar to aromatic D6h-symmetric benzene (CH)6, although silicon and germanium are in the same group of the periodic table as carbon. Recently, six-membered silicon and germanium rings with...

Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms E centers in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E cente...

Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in con...