the main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. the obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...

The investigations of Si 1s and 2p photoelectron spectra of a poly-Si plate with natural oxide layers based on high energy excitation using X-ray tubes with three kinds of target (Mg K(alpha), Zr L(alpha) and Ag L(alpha)) and on the theoretical calculations using DV-Xalpha were presented. From the comparison between the shift values of Si 1s and 2p corresponding with the metal and oxide, it was...

We report high-resolution infrared absorption spectra of the neutral donors phosphorus and lithium, and the neutral acceptor boron, in isotopically pure 28Si crystals. Surprisingly, many of the transitions are much sharper than previously reported in natural Si. In particular, the 2p(0) line of phosphorus in 28Si has a full width at half maximum of only 4.2 microeV, about 5 times less than the ...

The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...

Strong characteristic Kα X-ray lines are accompanied by weak lines due to the radiative Auger effect (RAE) [1, 2]. The characteristic Kα fluorescent X-rays (K-L2,3 lines) are emitted by the 2p→1s electric dipole transition after one of the 1s electron photoionization, Though the probability is less than 0.01, one of the 2p electrons is excited into an unoccupied discrete or continuum level simu...

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to...

Different observation data for cool star—Procyon (Obs IDs of 63, 1461 and 1224) available from Chandra Data Public Archive were co-added and analyzed. Emissivities of emission lines of highly charged silicon ions (Si VII–Si XII) were calculated over temperatures by adopting the published data of Liang et al. (2007, Atom. Data and Nucl. Data Tables, 93, 375). Using the emission measure derived b...

The C 1s, Si 2p, Si 2s, and O 1s inner-shell excitation spectra of vinyltriethoxysilane, trimethylethoxysilane, and vinyltriacetoxysilane have been recorded by electron energy loss spectroscopy under scattering conditions dominated by electric dipole transitions. The spectra are converted to absolute optical oscillator strength scales and interpreted with the aid of ab initio calculations of th...

The chemical modifications introduced in the passive layer of AISI 304 stainless steel after Si, Ce, and Mo ion implantation were investigated and compared with non-implanted steel by soft X-ray absorption spectroscopy. The influence of ion implantation on the passive properties was evaluated by measuring soft X-ray absorption spectra at the Cr, Fe, Ni, Mn and Si 2p in addition to oxygen 1s thr...

The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calcu...