The influence of different gate-layout geometries on a cascode nMOSFET’s transit frequencywas studied. Four cascode nMOSFET transistors were fabricated using different interdigitized gate layout geometries. Furthermore, a conventional cascode transistor was fabricated in order to compare it with the proposed interdigitized layouts. The transistors were measured on-wafer and the maximum transit ...

This work presents the design of an inductively source degenerated CMOS differential common source cascode Low Noise Amplifier (LNA) operating at 2 GHz frequency. An inductor is added at the drain of the main transistor to reduce the noise contribution of the cascode transistors. Another inductor connected at the gate of the cascode transistor and capacitive cross-coupling are strategically com...

In this work a low power, low voltage and high gain operational amplifier is proposed. For this purpose a negative resistance structure is used in parallel with output to improve the achievable gain. Because of using self cascode transistors in the output, the proposed structure remains approximately constant in a relatively large output voltage swing causing an invariable gain. To evaluate the...

Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use of a signal dependent cascode bias voltage is discussed and a selfbiased cascode configuration is p...

This article proposed a simple self cascode RGC amplifier configuration to increase the gain and bandwidth. The cascode amplifier eliminates the miller capacitance between input and output and facilitates high gain, high input and output impedance with high bandwidth. However, the cascode amplifier requires relatively high supply voltage for proper operation and it decreases the output voltage ...

A self-cascading CMOS circuit for operation in weak inversion is presented. The self-cascoding MOSFET circuit has been shown to exhibit greater than twentY:'fold increase in the output resistance, without paying virtually any penalty in real estate and power consumption. The circuit has been used to increase the gain in the front stage of operational amplifiers, and to obtain improved performan...

A novel low-power kick-back reduced comparator for use in high-speed flash analog-to-digital converters (ADC) is presented. The proposed comparator combines cascode transistors to reduce the kick-back noise with a built-in threshold voltage to remove the static power consumption of a reference. Without degrading other figures, the kick-back noise is reduced by a factor 8, compared to a previous...

Superharmonic injection locking is investigated in a new theoretical approach. Low power frequency dividers are designed using injection locked oscillators with cascode transistors. The Rockwell 0:5 m CMOS process is used to design a 3mW injection locked frequency divider in the 1800MHz frequency range. A 200MHz maximum locking range is achieved in simulations. 2SC3302 TOSHIBA NPN transistors a...

This article presents a comprehensive study on the occurrence mechanism, instability analysis, and suppression methods of self-sustained turn- off oscillation, which occurs cascode gallium nitride high electron mobility transistors (cascode GaN HEMTs). In beginning, oscillation waveforms are an...