the effect of chloride ions concentration on the electrochemical behavior of aisi 410 stainless steel in thesimulated concrete pore (0.1 m naoh + 0.1 m koh) solution was investigated by various electrochemicalmethods such as potentiodynamic polarization, mott–schottky analysis and electrochemical impedancespectroscopy (eis). potentiodynamic polarization curves revealed that increasing chloride ...

The goal of this paper is to describe a theoretical construction of an infinite collection of non-classical Schottky groups. We first show that there are infinitely many non-classical noded Schottky groups on the boundary of Schottky space, and we show that infinitely many of these are “sufficiently complicated”. We then show that every Schottky group in an appropriately defined relative conica...

The effect of chloride ions concentration on the electrochemical behavior of AISI 410 stainless steel in the simulated concrete pore (0.1 M NaOH + 0.1 M KOH) solution was investigated by various electrochemical methods such as Potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Potentiodynamic polarization curves revealed that increasing chlori...

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Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Sc...

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmissio...

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A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

The characteristics of composite rightand left-handed CRLH transmission lines periodically loaded with Schottky varactors are discussed in relation to the development of solitons. CRLH lines are highly dispersive and thus, when appropriately designed, compensate the effect of nonlinearity introduced by the Schottky varactors to support solitons. The reductive perturbation method applied to the ...

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calc...