Cognitive radio and/or SDR (Software Defined Radio) inherently requires multi-band and multi standard wireless circuit. The circuit is implemented based on Si CMOS technology. In this article, the recent progress of Si RF CMOS is described and the reconfigurable RF CMOS circuit which was proposed by the authors is introduced. At the present and in the future, several kind of Si CMOS technology ...

Polyphase filters (PPFs) are an efficient solution for high accuracy quadrature generation in radio frequency (RF) CMOS design. Although there are some guidelines for design of RF CMOS PPFs, they give too much freedom. With layout considerations, optimization of RF CMOS PPFs cannot be reached by using analytical calculations because of many constraints and tradeoffs in the design. Thus, in desi...

Analog-centric RFCMOS technology has played an important role in motivating the change of technology from conventional discrete device technology or bipolar IC technology to CMOS technology. However it introduces many problems such as poor performance, susceptibility to PVT fluctuation, and cost increase with technology scaling. The most important advantage of CMOS technology compared with lega...

This work presents a micromachined RF-CMOS transformer fabricated in a commercially available 0.18μm CMOS process. Maskless micromachining post-processing is used to remove oxide and substrate material from around the transformer, reducing parasitic effects and improving the performance of the transformer. Index Terms — baluns, CMOS integrated circuits; MEMS, maskless micromachining, Q enhancem...

With recent fast growth in the RF (Radio-Frequency) wireless communications market, the demand for high performance but low cost RF solutions is rising. Recent advances in SOI (Silicon on Insulator) and complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-ox...

This paper presents radio-frequency (RF) microsystems (MSTs) composed by low-power devices for use in wireless sensors networks (WSNs). The RF CMOS transceiver is the main electronic system and its power consumption is a critical issue. Two RF CMOS transceivers with low-power and low-voltage supply were fabricated to operate in the 2.4 and 5.7GHz ISM bands. The measurements made in the RF CMOS ...

Recently deep submicron and SiGe (silicongermanium) bipolar CMOS technologies have enhanced the performance of Si-based radio frequency (RF) integrated circuits up to microwave frequencies. The integration of RF MEMS components, such as inductors and capacitors, could further improve the performance of key RF circuit blocks such as voltage controlled oscillators (VCO), low-noise amplifiers, fil...

The research of the last ten years has resulted in the attempts towards single chip CMOS RF circuits for Bluetooth, ISM and DECT applications. An overvieuw of the use of CMOS for low-cost integration of a high-end cellular RF transceiver front-end is presented. Some fundamental pitfalls and limitations of RF CMOS are discussed. To circumvent these obstacles the choice of transceiver architectur...