The improvement in reverse recovery of power NPN bipolar transistor (BJT) through incorporation of ‘‘universal contact’’ in the base is studied in detail. It is shown that use of universal contact allows redistribution of base current in saturation from collector region where recombination lifetime is high to extrinsic base region where effective recombination lifetime is low. The reverse recov...

: Induction generators are gaining the popularity due to its simplicity and no synchronization problem. However the major drawback of this machine is its additional reactive burden on the system, where it is connected. In this paper an attempt is made to explore the performance of a grid connected induction generator (GCIG) due to weak grid conditions i.e. voltage and frequency fluctuations. It...

Effects of temperature on electrical parameters of polysilicon solar cells, fabricated using the phosphorous spin-on diffusion technique, have been studied. The current density–voltagecharacteristics of polycrystalline silicon solar cells were measured in dark at different temperaturelevels. For this purpose, a diode equivalent model was used to obtain saturation current densi...

The effect of optically generated reverse saturation current on the series resistance and negative resistance properties of single drift region (nnp) X band Si IMPATT diodes under (i) punch through, (ii) exact and (iii) undepleted field distributions have been studied. Simulation following Gummel-Blue approach [1] indicates an overall degradation of microwave properties with an increase of seri...

Transistors are three-terminal devices that use a small voltage (or current) applied to one contact to modulate (i.e. control) a large voltage (or current) between the other two contacts. An analogy is the vacuum tube from the 1900s. A small voltage applied to the 'grid' modulates a large current between the anode and cathode. The bipolar junction transistor The BJT (1947) is a minority carrier...

Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, has been experimentally investigated under synchronous electrical and optical excitation of silicon photo-diodes. The devices had areas of 8.2 mm and reverse bias saturation currents of the order of 10 A. Their current-voltage (I-V) response was exploited experimentally both in the dark and under various ill...

Inductor designs with large dc current relative to ac ripple are often constrained by saturation, which limits their size, loss, and current-carrying capability. Typical saturation-limited designs, though, further handicap performance substantially underutilizing core material's flux carrying capabilities. Instead of operating the across its full swing range from reverse saturation forward thes...

The static power consumprion is analysed with taking into account reverse biased p_n jun;ti; current and MOSFET leakage current. The p_n junction reverse current is assessed as a sum of saturation I, and generation I*.n .o,r,fon"nrr. fl. donrinant leakage cument of MId structirc for deep s,ubmigro.n technologies is subthrc_sholA .rrrcnt I,"u [2], thus this. is the only con'lponcnt considc.rcd. ...