نتایج جستجو برای: rapid thermal annealing
تعداد نتایج: 537532 فیلتر نتایج به سال:
Post-deposition rapid thermal annealing ~RTA! was performed on multilayered films consisting of a Mn capping layer on top of CoCrPt/CrTi/NiAl. High coercivities were achieved even at low M rt values and coercivity values increased more than that would have been predicted by the decrease in magnetization values. This is most likely due to the significant decrease in intergranular exchange coupli...
The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/ MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetor...
Understanding the thermal budget of perpendicular materials is crucial for the potential application perpendicular magnetic tunnel junctions. In this paper, we study the effects of high-temperature rapid thermal annealing on the structural and magnetic properties of ultra-thin Co/Pd multilayers deposited at room temperature. It is shown that perpendicular magnetic anisotropy of ultra-thin Co/Pd...
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We concl...
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