The suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. A feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. Physical vapor deposition (PVD) and pulsed plasma-enhanced chemical vapor deposition (PECVD), naturally, form asymmetric na...

the suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. a feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. physical vapor deposition (pvd) and pulsed plasma-enhanced chemical vapor deposition (pecvd), naturally, form asymmetric na...

A pulsed plasma enhanced chemical vapor deposition (PECVD) reactor is used for the preparation of thin polyacetylene films. A theoretical model based on the mass transport characteristics of the reactor is developed in order to correlate with experimentally obtained spatial deposition profiles for the acetylene plasma polymer film deposited within the cylindrical reactor. Utilizing a free radic...

We have developed 0.1-μm gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeterwave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer deposition (ALD) aluminum oxide (Al2O3) and plasma-enh...

Here we approximate the plasma kinetics responsible for diamondlike carbon DLC depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition PECVD in a methane CH4 atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequen...

Silicon nanowires with high aspect ratio were grown using PPECVD and a gold catalyst on a variety of different substrates. The morphology of the nanowires was investigated for a range of crystalline silicon, glass, metal, ITO coated and amorphous silicon coated glass substrates. Deposition of the nanowires was carried out in a parallel plate PECVD chamber modified for PPECVD using a 1kHz square...

1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...