Sumitomo Electric Industries, Ltd. invented a technique to make polytetrafluoroethylene (PTFE) porous using PTFE stretching technology, which was patented in 1962.(1) Drawing on the technique, the company has subsequently released various porous PTFE products such as filters and hollow fiber products under the trade name of POREFLON. Porous PTFE filters, one of these porous PTFE products, use s...

We demonstrate computationally that two-dimensional polyphenylene is a typical semiconductor with a wide band gap, and the porous structure endows polyphenylene remarkably high selectivity for H(2) permeability relative to CO(2), CO and CH(4). This experimentally available porous graphene is expected to find applications in a hydrogen energy society.

The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent r...

The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously sugge...

Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous...

Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at temperatures from 500 to 900 C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide contai...

Cu2O p-type semiconductor hollow porous microspheres have been prepared by using a simple soft-template method at room temperature. The morphology of as-synthesized samples is hollow spherical structures with the diameter ranging from 200 to 500 nm, and the surfaces of the spheres are rough, porous and with lots of channels and folds. The photocatalytic activity of degradation of methyl orange ...