an analytical solution of the equation describing diffusion of intrinsic point defects in semiconductor crystals has been obtained for a one-dimensional finite-length domain with the robin-type boundary conditions. the distributions of point defects for different migration lengths of defects have been calculated. the exact analytical solution was used to verify the approximate numerical solutio...

Abstract Grain boundary diffusion in polycrystalline materials is a physical phenomenon of great fundamental interest and practical significance. Although accelerated atomic transport along grain boundaries has been known for decades, atomic-level understanding mechanisms remains poor. Previous atomistic simulations focused on low temperatures where the structure ordered or high it highly disor...

An analytical solution of the equation describing diffusion of intrinsic point defects in semiconductor crystals has been obtained for a one-dimensional finite-length domain with the Robin-type boundary conditions. The distributions of point defects for different migration lengths of defects have been calculated. The exact analytical solution was used to verify the approximate numerical solutio...

Point defect kinetics are important for understanding and modeling dopant diffusion in silicon. This article describes point defect models and compares them with experimental results for intrinsically doped material. Transient dopant diffusion due to low dose silicon implant damage can be modeled with the same parameters as oxidation enhanced diffusion, and therefore provides an additional tech...

Point-defect kinetics are important for understanding and modeling dopant diffusion in silicon. This paper describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion (OED). Interstitial traps are shown to be critical for consistent agreement ...

Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the timescales involved in the diffusion process....

We theoretically investigate the relationship between impurity diffusion profiles and the underlying atomicscale diffusion mechanisms that occur via intermediate species in elemental semiconductors. We focus particularly on diffusion regimes characterized by short versus long diffusion times and low versus high transport capacities. Based on analytic derivations and numerical simulations, we sh...