نتایج جستجو برای: pn semiconductor detector

تعداد نتایج: 128614  

حسینی, سید ابراهیم, ظهیری, زینب, کبیریان دهکردی, بهنام,

In this paper, we report a new structure for bipolar junction transistors based on concept of surface inversion. This structure is made up of only one PN junction and a metal with appropriate work function connected to the p region which results in an inversion of electrons in the semiconductor near the metal-semiconductor interface, this inversion layer plays the role of emitter n+ region. Sim...

Journal: :journal of medical signals and sensors 0
mohsen hajizadeh-safar m ghorbani s khoshkharam z ashrafi

gamma camera is an important apparatus in nuclear medicine imaging. its detection part is consists of a scintillation detector with aheavy collimator. substitution of semiconductor detectors instead of scintillator in these cameras has been effectively studied. in this study, it is aimed to introduce a new design of p-n semiconductor detector array for nuclear medicine imaging. a p-n semiconduc...

Objective(s): The energy resolution of a cadmium-zinc-telluride (CZT) solid-state semiconductor detector is about 5%, and is superior to the resolution of the conventional Anger type detector which is 10%. Also, the window width of the high-energy part and of the low-energy part of a photo peak window can be changed separately. In this study, we used a semiconductor detector and examined the ef...

Journal: :asia oceania journal of nuclear medicine and biology 0
yasuyuki takahashi department of nuclear medicine technology, gunma prefectural college of health sciences, maebashi, japan masao miyagawa department of radiology, ehime university graduate school of medicine, toon, japan yoshiko nishiyama department of radiology, ehime university graduate school of medicine, toon, japan naoto kawaguchi department of radiology, ehime university graduate school of medicine, toon, japan hayato ishimura department of radiological technology, ehime university hospital, toon, japan teruhito mochizuki department of radiology, ehime university graduate school of medicine, toon, japan

objective(s): the energy resolution of a cadmium-zinc-telluride (czt) solid-state semiconductor detector is about 5%, and is superior to the resolution of the conventional anger type detector which is 10%. also, the window width of the high-energy part and of the low-energy part of a photo peak window can be changed separately. in this study, we used a semiconductor detector and examined the ef...

Adeyemo Titilope, Akanmu Alani, Adediran Adewumi, Akinbami Akinsegun, Osunkalu Vincent,

Background: Cobalamin deficiency and peripheral neuropathy (PN) are commonly seen in HIV-infected adults. The level of urine methylmalonic acid (UMMA), a reliable indicator of tissue cobalamin status, was determined in HIV infected subjects with and without PN to establish this association. Methods: One hundred and ninety-eight (198) consenting HIV infected subjects with and without PN were rec...

Journal: :caspian journal of internal medicine 0
adediran adewumi akanmu alani akinbami akinsegun adeyemo titilope osunkalu vincent

background: cobalamin deficiency and peripheral neuropathy (pn) are commonly seen in hiv-infected adults. the level of urine methylmalonic acid (umma), a reliable indicator of tissue cobalamin status, was determined in hiv infected subjects with and without pn to establish this association. methods: one hundred and ninety-eight (198) consenting hiv infected subjects with and without pn were rec...

Journal: :IEEE Trans. Communications 1995
Hyuck M. Kwon

AbsfractThis paper computes the probabilities of detection and false alarm for a pseudonoise (PN) sequence code lock detector when a strong radio frequency interference (RFI) hits the communications link. A soft-limiter, a hard-limiter, and no limiter at the front-end of the receiver are considered. Both continuous wave (CW) type RFI and pulse type RFI are analyzed. It is shown that a soft-limi...

2007
Konstantin Lukin

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a re...

Journal: :MAKARA Journal of Technology Series 2014

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