نتایج جستجو برای: photoresist

تعداد نتایج: 1295  

Journal: :Lab on a chip 2008
Kwang-Seok Yun Euisik Yoon

This paper demonstrates a new method of implementing complex microchannels in PDMS, which is simply constructed using three-dimensional photoresist structures as a master mold for the PDMS replica process. The process utilizes UV-insensitive LOR resist as a sacrificial layer to levitate the structural photoresist. In addition, the thickness of photoresist structures can be controlled by multi-s...

2007
Jianming Zhou Neal V. Lafferty Bruce W. Smith John H. Burnett

The progress of optical lithography has approached the sub-30 nm regime using 193nm excimer lasers as the exposure sources. To increase the numerical aperture (NA) further, many issues, especially those related to materials, need to be addressed. In this paper, we present the analytical and experimental results of oblique two-beam lithography with sapphire (Al2O3) as the optical material. At 19...

Journal: :Applied optics 1977
A C Livanos A Katzir J B Shellan A Yariv

The properties of the Shipley AZ-1350B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 A +/- 5 A/sec. Gratings of high efficiency have been successfully fabricated using the ...

1999

In this proposal we seek to establish a porous silicon based etching process in the WTC microfabrication laboratory. The new process will allow us to etch high aspect ratio holes through a wafer. Holes like these are important for decreasing the dead volume of connections between micro and macro systems and for increasing the complexity of micro-fluidic systems. At the present time, the minimum...

Journal: :Applied optics 1988
C A Mack

A review of the theory of absorption on microscopic and macroscopic levels is given. This theory is then applied to the absorption of UV light by diazo-type positive photoresist during exposure. A formal treatment of the properties of polychromatic light is given. Using these analyses, the effects of polychromatic exposure of a photoresist are derived. Finally, experimental verification of Beer...

Journal: :Nanotechnology 2010
Chien-Chih Huang Brian D Pelatt John F Conley

A method for achieving large area integration of nanowires into electrically accessible device structures remains a major challenge. We have achieved directed growth and integration of ZnO nanobridge devices using photolithographically patterned carbonized photoresist and vapor transport. This carbonized photoresist method avoids the use of metal catalysts, seed layers, and pick and place proce...

Journal: :Optics express 2010
Sreemanth M V Uppuluri Edward C Kinzel Yan Li Xianfan Xu

We report results of parallel optical nanolithography using nanoscale bowtie aperture array. These nanoscale bowtie aperture arrays are used to focus a laser beam into multiple nanoscale light spots for parallel nano-lithography. Our work employed a frequency-tripled diode-pumped solid state (DPSS) laser (lambda = 355 nm) and Shipley S1805 photoresist. An interference-based optical alignment sy...

Journal: :Applied optics 2001
K E Paul C Zhu J C Love G M Whitesides

We describe the fabrication of large areas (4 cm(2)) of metallic structures or aperture elements that have ~100-350-nm linewidths and act as frequency-selective surfaces. These structures are fabricated with a type of soft lithography-near-field contact-mode photolithography-that uses a thin elastomeric mask having topography on its surface and is in conformal contact with a layer of photoresis...

Journal: :Micromachines 2014
Grégoire Genolet Hubert Lorenz

A major breakthrough in UV-LIGA (Lithographie, Galvanoformung and Abformung) started with the use of epoxy-based EPON SU-8 photoresist in the mid-1990s. Using this photoresist has enabled the fabrication of tall and high aspect ratio structures without the use of a very expensive synchrotron source needed to expose the photoresist layer in X-ray LIGA. SU-8 photoresist appeared to be well-suited...

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