This paper presents work aimed at optimizing the fabrication of silicon nitride Si(x)N(y) thin-film visible-light planar waveguides using plasma-enhanced chemical vapour deposition (PECVD). The effects of plasma frequency, precursor gas ratio, and thermal annealing in relation to waveguide optical properties (refractive index, propagation losses) are studied. Experimental results over a wide ra...

The principal object of this paper is to develop a neural network model, which can simulate the plasma enhanced chemical vapor deposition (PECVD) process in TFT-Array procedure. Then the Boolean logic rules are extracted from the trained neural network in order to establish a knowledge base of expert system. The input data of neural network was collected form the process parameters of PECVD mac...

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 Å plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the SiH4/NH3 gas mixing rate, working pressure, and RF power of PECVD at 250oC. Five PECVD process parameters are designed to lower the refractive index and ...

The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vac...

A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD) of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD react...

The suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. A feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. Physical vapor deposition (PVD) and pulsed plasma-enhanced chemical vapor deposition (PECVD), naturally, form asymmetric na...

the suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. a feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. physical vapor deposition (pvd) and pulsed plasma-enhanced chemical vapor deposition (pecvd), naturally, form asymmetric na...

Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directl...