نتایج جستجو برای: oxynitride thin films

تعداد نتایج: 181302  

Kiomars Yasserian Zahra Karimi

Using the Langmuir probe method, the reactive plasma parameters were studied in different ratios of oxygen and nitrogen concentrations in a DC cylindrical discharge device.The plasma parameters such as plasma potential, electron density and electron temperature wereextracted from the current-voltage characteristic’s curve of Langmuir probe to find the optimum conditions for deposit the oxy...

Journal: :Chemical communications 2006
Jiacheng Wang Qian Liu

Highly-ordered, pore-modified with amine groups, and glass-like mesoporous silicon oxynitride thin films were prepared by heat treatment of as-synthesized mesoporous silica thin films in a flowing ammonia environment at high temperatures.

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه ملایر - دانشکده علوم 1392

the control of the configuration of the nise nanostructural thin films with temperature

2002
James H. Stathis

The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2nm. I will review the physics and statistics of dielectric wearout and breakdown in ultra thin SiO2-based gate dielectrics and discuss the impli...

2006
C. Moura P. Carvalho F. Vaz L. Cunha E. Alves

Raman spectroscopy has been used as a local probe to characterize the structural evolution of magnetron-sputtered decorative zirconium oxynitride ZrOxNy films which result from an increase of reactive gas flow in the deposition The lines shapes, the frequency position and widths of the Raman bands show a systematic change as a function of the reactive gas flow (a mixture of both oxygen and nitr...

2011
Marco Ficcadenti Nicola Pinto Lorenzo Morresi Gérald Ferblantier Marzia Carrada Abdelillah Slaoui

We investigated the morphological and structural change in silicon nanostructures embedded in the silicon oxynitride matrix. The study has been carried out on thin films thermally annealed at high temperature, after deposition at 400°C by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition (ECR‐ PECVD), under different deposition parameters. Our stud...

Journal: :Materials advances 2022

Epitaxial perovskite self-oxidized oxynitride N:BaTiO 3 thin films, deposited on 1% Nb-doped SrTiO (001) single crystals, were obtained by atomic nitrogen assisted molecular beam epitaxy without supplying additional oxygen gas. Their growth,...

2012
K. M. Green D. B. Hayden D. R. Juliano D. N. Ruzic

Related Articles On the density of states of germanium telluride J. Appl. Phys. 112, 113714 (2012) Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices Appl. Phys. Lett. 101, 232907 (2012) Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers J. Appl. Phys. 112, 113511 (2012) Improvement of (004) texturin...

2006
L. Cunha F. Vaz C. Moura L. Rebouta P. Carvalho E. Alves A. Cavaleiro Ph. Goudeau J. P. Rivière

Single-layered zirconium oxynitride (ZrNxOy) thin films have been deposited on steel substrates, at a constant temperature of 300 8C, by radiofrequency (rf) reactive magnetron sputtering of a pure Zr target in an argon–oxygen–nitrogen atmosphere. The variation of the flow rate of the reactive gases enabled changes in the composition and structure of the films. X-ray diffraction (XRD) and glanci...

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