silicon has useful effects on growth and yield of many plants. the aim of the present study is to investigate the impact of nano silicon oxide on proliferation and improvement of some growth traits of apple, cultivar gala. thus, an experiment was designed based on completely randomized design (crd) with five levels of nano silicon oxide concentrations (0, 25, 50, 100 & 200 ppm) in five replicat...

the surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. for this purpose, series of experiments have been demonstrated to grow oxide film on si (111) substrate. then these films have been used to study the structure of the film by using x-ray photo emission spectroscopy (xps) technique. the obtained results indicate...

The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...

The optical properties of four different silicon nanowire structures were investigated. Two of the samples consisted of spheres of nanocrystalline silicon en-capsulated by silicon oxide nanowires, with other two consisting of crystalline silicon nanowires coated by silicon oxide shells. The nanostructures produced by oxide assisted growth consisted of spheres of crystalline silicon encapsulated...

The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the nature of these layers. In this paper we specifically investigated the boron out-diffusion from a silicon junction into the silicon oxide in presence of a silicon oxide/s...

Three samples with dielectric layers from high- κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high- κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk...

in this paper, the morphology, roughness and nano structural properties of sio2/poly vinyl pyrrolidone  synthesized with sol gel method,  characterized by using scanning electron microscopy, atomic force microscopy and gps132a techniques.the main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...

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We have developed a novel technique based on the selective desorption of an oxide film in order to grow ordered arrays of silicon carbide nanocrystals on a silicon surface. These nanocrystals form as a byproduct of void nucleation in the oxide during the high-temperature vacuum annealing of silicon, a process which normally produces a random distribution of nanocrystals across the silicon surfa...