نتایج جستجو برای: optical constant
تعداد نتایج: 478035 فیلتر نتایج به سال:
in this thesis, structural, electronical, and optical properties of inverse pervskite(ca3pbo) in cubic phase have been investigated.the calculation have been done based on density functional theory and according to generalized gradiant approximate (gga) as correlating potential. in order to calculate the configurations, implementing in the wien2k code have been used from 2013 version. first of ...
zno nanorod was prepared by microwave assisted method. the crystal structure of the nano powders were confirmed by x-ray diffraction analysis and the mean particle size was estimated by the scherrer,s formula .the surface morphology of the nano particles were analyzed by using sem . the absorption spectrum of the material in the uv-vis range was recorded .the energy band gap of the material w...
nanoparticles of zirconium(iv) tungstate are prepared by chemical co-precipitation method. thecharacterizations have been carried out by tg/dta, dsc, afm, xrd, ftir and uv-vis spectrum. plspectrum shows two emission bands at 350 nm and at 477 nm. the effects of frequency on the dielectricbehavior and ac electrical conductivity have been studied. the dielectric constant is found to be 119.43 at1...
The original optical flow algorithm [1] dealt with a flow field that could vary from place to place in the image, as would typically occur when a camera is moved through a three-dimensional environment—or if objects moved in front of a fixed camera. A related, but simpler problem, is that of recovering the motion of an image, all parts of which move with the same velocity (section 4.3 in [2]). ...
In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS) as precursor. Thin films were annealed at different temperatures (400-600oC). Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ell...
silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. the layers are produced with electron gun evaporation method under ultra-high vacuum condition. the optical reectance and the transmittance of produced layers were measured by using spectrophotometer. the optical functions such as, real and imaginary part of refractive index, real and imaginar...
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