نتایج جستجو برای: off state
تعداد نتایج: 1021823 فیلتر نتایج به سال:
In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The ...
Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...
According to the Constitution of the Islamic Republic of Iran, Government is to be incumbent upon supplying public goods and services. Undoubtedly, to this end, government requires finances, and with regard to the financial restrictions, the possibility of supplying goods and services involves serious challenges, such as government debt for which the government must pay off. There are various w...
Introduction: Freezing of gait, a common PD motor symptom, could increase the risk of falling. This study aimed to investigate the clinimetric attributes of the Freezing of Gait Questionnaire (FOGQ) for people with Parkinson disease in the “off” state. Methods: A total of 115 patients with Parkinson disease (PD; mean age, 60.25 years) were included. Acceptability, internal consistency (by the ...
in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...
This paper draws attention to the risk of rounding error in the numerical evaluation of steady-state probabilities for the M/M family of queues. A method for avoiding the risk is presented which is easy to program for calculation in practice.
This paper draws attention to the risk of rounding error in the numerical evaluation of steady-state probabilities for the M/M family of queues. A method for avoiding the risk is presented which is easy to program for calculation in practice.
In biaxially strained p-MOSFET with Si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. In this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . Using simulation the impact of this method on the parasit...
modeling and simulation of communication circuits at high frequency are important challenges ahead in the design and construction of these circuits. knowing the fact that the lumped element model is not valid at high frequency, distributed analysis is presented based on active and passive transmission lines theory. in this paper, a lossy transmission line model of traveling wave switch (twsw) i...
Modeling and simulation of communication circuits at high frequency are important challenges ahead in the design and construction of these circuits. Knowing the fact that the lumped element model is not valid at high frequency, distributed analysis is presented based on active and passive transmission lines theory. In this paper, a lossy transmission line model of traveling wave switch (TWSW) i...
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