an improved mixed order model is presented to describe the thermolumunescence (tl) glow peaks. in this model a fraction of charge carriers, which undergo nonradiative recombination following thermal excitation is taken into account. therefore, it is expected that the proposed model will produce more realistic kinetic parameters than that of mixed order model. the tl glow curves generated by the...

The defect structure onattice-mismatched I-pm InxGal_xAs X 10-3) epilayers on GaAs was studied with scanning cathodoluminescence (CL), transmission electron microscopy (TEM), high-voltage electron microscopy, and scanning electron microscopy. CL shows that nonradiative recombination lines exist in the GaAs buffer layer as far as 4000 A from the interface. The density of these defects is indepen...

Voltage losses reduce the photovoltaic conversion efficiency of thin-film solar cells and are a primary limitation in Cu(In,Ga)Se2. Herein, voltage loss analysis Cu(In,Ga)Se2 fabricated at three institutions with variation process, bandgap, absorber structure, postdeposition treatment (PDT), is presented. Nonradiative due to Shockley–Read–Hall charge carrier recombination dominate constitute >7...

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependen...

Free electrons or holes can mediate the nonradiative recombination of excitons in carbon nanotubes. Kinematic constraints arising from the quasi-one-dimensional nature of excitons and charge carriers lead to a thermal activation barrier for the process. However, a model calculation suggests that the rate of recombination mediated by a free electron is the same order of magnitude as that of two-...

We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in the present GaN nanowires is dominated by a nonradiative channel between 10 and 300 K. Furthermore, bound and free excitons in GaN NWs are strongly ...

We present a simple method to measure the radiative and nonradiative recombination rates of individual fluorescent emitters at room temperature. By placing a single molecule successively close and far from a dielectric interface and simultaneously measuring its photoluminescence decay and its orientation, both the radiative and nonradiative recombination rates can be determined. For CdSe nanocr...

We show that even in quantum-dot (QD) lasers with very low threshold current densities (Jth = 40–50 A/cm at 300 K), the temperature sensitivity of the threshold current arises from nonradiative recombination that comprises ∼60% to 70% of Jth at 300 K, whereas the radiative part of Jth is almost temperature insensitive. The influence of the nonradiative recombination mechanism decreases with inc...

We have studied the influence of structural defects on the spatial variation of radiative and nonradiative recombination in an InGaAs/AlGaAs/GaAs resonant cavity enhanced npn heterojunction phototransistor ~HPT! structure using cathodoluminescence ~CL! and electron beam-induced current ~EBIC! imaging. Absorber layers of InGaAs/GaAs multiple quantum wells ~MQWs! are used to provide the photosens...