In this letter we extend previously established results for nested carbon nanocones to both nested boron nitride and carbon-boron nitride nanocones. Based purely on mechanical principles and classical mathematical modelling techniques, we determine the energetically favourable structures for nested boron nitride and carbon-boron nitride nanocones. While only three apex angles for boron nitride ...

density functional theory ,(dft) calculations have been performed to investigate the properties ofcarbon decorated (c-decorated) models of boron nitride (bn) nanocones. to this aim, the apex andtip of nanocone have been substituted by the carbon atoms to represent the c-decorated models. theresults indicated that dipole moments and energy gaps could reveal the effects of c-decorations onthe pro...

In this research, geometrical structures of armchair single walled boron nitride nanotube (SWBNNT) and armchair single walled aluminum nitride nanotube (SWAlNNT) were optimized by Density Functional Theory (DFT) in the gas phase, both having the same length of 5 angstrom and n=9, m=9. B3LYP/6-31G* level of theory have been used to determine and compare electronic properties, n...

In this research, geometrical structures of armchair single walled boron nitride nanotube (SWBNNT) and armchair single walled aluminum nitride nanotube (SWAlNNT) were optimized by Density Functional Theory (DFT) in the gas phase, both having the same length of 5 angstrom and n=9, m=9. B3LYP/6-31G* level of theory have been used to determine and compare electronic properties, n...

The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demo...

the doping reaction of truncated boron nitride and carbon nanotubes with aluminium atom wastheoretically investigated. the am1, pm3, and pm6 semiempirical methods have been used toevaluate the thermochemistry of doping reactions of single walled boron nitride nanotubes andcarbon nanotubes. the enthalpy changes, gibbs free energy changes, and entropy changes of studieddoping reactions were evalu...

The history of silicon nitride (Si3N4) has been described previously; detailed analyses of particles of meteroritic rock have been shown to contain silicon nitride crystals, suggesting that this material exists naturally in the galaxy.1 Synthetic Si3N4 was probably developed by Deville and Wöhler in 1859. Commercial interest in this material increased in the 1950s, as the material properties of...

The microstructure and interfacial fracture energy of silicon nitride/boron nitride fibrous monoliths, GBN, were determined as a function of starting silicon nitride composition and temperature using the method described by Charalambides. The glassy phase created by the sintering aids added to the silicon nitride cells was shown to migrate into the boron nitride cell boundaries during hot-press...

Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...

ABSTRACT The reduction of the nitride-bridged diuranium(IV) complex Cs[{U(OSi(OtBu)3)3}2(μ-N)]affords the first example of a uranium nitride complex containing uranium in the +III oxidation state. Two nitride-bridged complexes containing the heterometallic fragments Cs2[U(III---)-N-(---U(IV)] and Cs3[U(III---)-N-(---U(III)] have been crystallographically characterized. The presence of two or th...