li2ni8o10 and limn2o4 nanoparticles as cathode materials of lithium ion battery, were successfully synthesized using lithium acetate, nickel and manganese acetate as li, ni and mn sources and stearic acid as a complexing reagent. the structure of the obtained products were characterized by ft-ir and xrd. the shape, size and distribution of the li2ni8o10 and limn2o4 nanoparticles were observed b...

In this work we report the synthesis and characterization of a new nanostructured platinum/tin/telluride inorganic/surfactant composite. The material is synthesized from soluble SnTe(4)(4-) clusters and is shown to have well-defined nanometer scale periodicity along with unique optical properties. Small-angle X-ray scattering indicates that the material forms with a 2D hexagonal honeycomb struc...

This paper describes synthesis of In2S3 nanoparticles by sonochemistry method and their application to enhance solar cells performance which In2S3 nanoparticles work as co-sensitizer for the first time. In2S3 is a narrow band gap semiconductor (2 eV) with conduction band higher than TiO2. Therefore it can transfer electron to the conduction band of TiO2. The effect of different parameters such ...

It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III–V materials. However, to this point, investigations have assumed the materials to be perfect. In this article, we present results of a semiconductor waveguide inverter in GaAs and InAs with disordered material effects included in the simulation. The behavior of the ...

cumn2o4 nanoparticles, a semiconducting materials with tunable functionalities in solid oxide fuel cell, was successfully synthesized via a sol-gel method using its respective metal cations sources i.e. cu2+ and mn2+ in an appropriate complexing agent.the vibrational frequencies below 1000 cm-1 of the obtained materials confirmed the formation of metal-oxygen (m-o:cu-o, mn-o) bond in the sample...

The design of compound semiconductor based devices increasingly requires the integration of materials of differing band gaps. This is achieved by depositing layers of different semiconductors epitaxially on a substrate. Techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) can be used to precisely control the thickness and chemical composition of he...