Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions, most experimental studies have been carried out on devices that are about ten times larger than current silicon transistors. Here, we show that nanotube transistors...

The use of carbon nanotubes for field effect nanoelectronic devices, which has been recently demonstrated, motivates further studies of electrochemical and chemical analogues of nanotube molecular transistors. However, chemical gating is not applicable for modern electronics due to its slow response. Herein we propose a novel molecular electronic device: Nanotube LightControlled Switch (NLCS). ...

A quantum capacitance is calculated for a single wall carbon nan otube in a eld e ect device The calculation is performed on a base of a continuum model taking into account full microscopics A general ex pression for the atomistic capacitance of a nanotube of arbitrary shape is derived The result is useful for modeling of electromechanical action of a nanotube device and for nanotube electronic...

The experimentally verified electrical properties of carbon nanotube structures and manifestations in related phenomena such as thermoelectricity, superconductivity, electroluminescence, and photoconductivity are reviewed. The possibility of using naturally formed complex nanotube morphologies, such as Y-junctions, for new device architectures are then considered. Technological applications of ...

We study the geometry-dependent resistivity scaling in single-walled carbon nanotube films as a function of nanotube and device parameters using Monte Carlo simulations. We first demonstrate that these simulations can model and fit recent experimental results on the scaling of nanotube film resistivity with device width. Furthermore, we systematically study the effect of four parameters; namely...

In this paper, we describe the development of device models and tools for the design of the carbon nanotube FET (CNFET). Both HSPICE model and Verilog-A model for CNFET including typical device/circuit level non-idealities have been developed. They can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.

The paper reviews quantum and classical effects which arise in physics of nanotube devices. Knowledge of nanotube electronic structure has been used for a calculation of quantum capacitance and quantum terms in van der Waals energy. Combining analytical theory and quantum mechanical micromodels I worked out a description for nanoelectromechanical devices, for example, electromechanical switch. ...

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNT...

A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube mole...

Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohm...