we have simulated the carrier concentration and temporal response characteristics of a back-gated metal- semiconductor-metal (bg-msm) photodetector in one dimension as a function of optical pulse position on the active region in an equilibrium condition (without bias voltage to the photodetector). we have adopted a nonlinear ambipolar transport model to simulate the behavior of photo-generated ...

Well-aligned Cu-doped ZnO nanorods were successfully synthesized on polyethylene terephthalate (PET) substrate using chemical bath deposition method. The structural and optical properties of Cu-doped ZnO nanorods were investigated using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy...

In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1...

We present a novel MSM (metal-semiconductor-metal) based tunable photodetector for discrimination between two wavelengths with a 365GHz channel spacing. If integrated with CMOS circuits, this photodetector has the potential to perform high-speed channel switching in WDM-based systems. With increasing data traffic load in telecommunications networks, wavelength division multiplexing (WDM) is ess...

Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective ap...

Abstract. This paper demonstrates the first 4H-SiC metal-semiconductor-metal (MSM) UV photodetector. Two types of MSM photodetectors are fabricated for comparison: one in p-type 4HSiC and the other in n-type 4H-SiC. The n-type SiC photodetectors show a low dark current less than 10nA at -15V bias while the p-type ones show a lower dark current of 0.3nA at -25V. Photoresponsivity is measured fro...

AlGaN/GaN metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors with photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated. It was found that the transmittances of Ni/Au films increased while the photodetector dark currents became significantly lower after annealing. With a 5 V applied bias, it was found that the photocurrent to dark cur...

We have designed a process-insensitive preamplifier for an optical receiver, fabricated it in several different minimum feature sizes of standard digital CMOS, and demonstrated design scaleability of this analog integrated circuit design. The same amplifier was fabricated in a 1.2 μm and two different 0.8 μm processes through the MOSIS foundry [1]. The amplifier uses a multistage, low-gain-per-...

We fabricated UVB filtered TiO₂ MSM photodetectors by the localized surface plasmon resonance effect. A plasmonic filter structure was designed using FDTD simulations. Final filter structure was fabricated with Al nano-cylinders with a 70 nm radius 180 nm period on 360 nm SiO₂film. The spectral response of the TiO₂ MSM photodetector was modified and the UVB response was reduced by approx. 60% w...