a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

the full adders (fas) constitute the essential elements of digital systems, in a sense that they affect the circuit parameters of such systems. with respect to the mosfet restrictions, its replacement by new devices and technologies is inevitable. qca is one of the accomplishments in nanotechnology nominated as the candidate for mosfet replacement. in this article 4 new layouts are presented fo...

Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to submicron/nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform ...

The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...

Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models -such as the MOSFET square law -for circuit design calculations. However, low-voltage, lowpower systems development demands more advanced circuit design techniques. In this paper I present a brief literature review of...

The DRAM cells consist of one or several MOSFET devices and the subthreshold leakage current through the MOSFET strongly depends on the temperature variation. Therefore, it is obvious that the leakage of a memory cell is highly related to temperature variation. The temperature of the circuit can be measured indirectly by using leakage sensors which can be applied to various VLSI circuits becaus...

We aim at constructing a common platform for compact model development based on the Verilog-A language for collaboration among different research groups. The project aims in particular at a framework for efficient development of multi-gate MOSFET models for circuit simulation. We have developed several prototypes of multi-gate MOSFET models based on different concepts till now. Phenomena expect...

This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...

In this paper, we solve the MOSFET RF circuit ordinary differential equations with the waveform relaxation method, monotone iterative method, and Runge-Kutta method. With the monotone iterative method, we prove each decoupled and transformed circuit equation converges monotonically. This method provides an alternative in the time domain numerical solution of MOSFET RF circuit equations.