نتایج جستجو برای: molecular beam epitaxy

تعداد نتایج: 746525  

2015
Zhongguang Xu Renjing Zheng Alireza Khanaki Zheng Zuo Jianlin Liu

Articles you may be interested in Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy Appl. Optical properties of Si-and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy J. In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN Appl. Magnetic properties of Mn x Ti 1 − x ...

2016
Patrick Vogt Oliver Bierwagen

Articles you may be interested in High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl.

Journal: :The Review of scientific instruments 2018
Tassie K Andersen Seyoung Cook Erika Benda Hawoong Hong Laurence D Marks Dillon D Fong

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while deliverin...

2015
Jin Fan Lu Ouyang Xinyu Liu Ding Ding Jacek K. Furdyna David J. Smith Yong-Hang Zhang

Articles you may be interested in Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001)...

2014
M. Hong Y. K. Chen M. C. Wu J. M. Vandenberg S. N. G. Chu J. P. Mannaerts M. A. Chin

Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...

2015
W. Kong A. Mohanta A. T. Roberts W. Y. Jiao J. Fournelle T. H. Kim M. Losurdo H. O. Everitt A. S. Brown

Articles you may be interested in Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy Effects of different plasma species (atomic N, metastable N 2 * , a...

2016
Patrick Vogt Oliver Bierwagen

Articles you may be interested in Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl.

2014
A. Soukiassian W. Tian V. Vaithyanathan D. G. Schlom

Same as Report (SAR) 18. NUMBER

2015
Wulf Wulfhekel Ingo Beckmann Nuphar N. Lipkin Georg Rosenfeld George Comsa

Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxial films, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu~111!. The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in ...

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