moving towards nanometer scales, quantum-dot cellular automata (qca) technology emerged as a novel solution, which can be a suitable replacement for complementary metal-oxide-semiconductor (cmos) technology. the 3-input majority function and inverter gate are fundamental gates in the qca technology, which all logical functions are produced based on them. like cmos technology, making the basic c...

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nanoscale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we proposed a novel 7-input minority gate in CNTFET technology that has only 9 CNTFETs. Minority function is utilized in the voting systems for decision making ...

Quantum dot cellular Automata technology is used in this paper which overcomes the design constraints of nanoscale CMOS circuits. This paper presents the analysis of 2:4 decoder circuit using four different methodologies. QCA based Decoder circuit is implemented using coupled majority voter minority gate, 45 0 rotated cells, multilayer wire crossings and five input Majority Voter gate. Comparat...

Abstract In this paper the I-V conduction mechanism for gate injection (-Vg), Stress-Induced Leakage Current(SILC) characteristics and time-to-breakdown(tbd) of PMOS capacitors with p poly-Si and poly-SiGe gate material on 5.6,4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling(MCT) from the gate is proposed for the IV and SILC characteristics at –Vg of our d...

Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectr...

We report a scanning photocurrent microscopy (SPCM) study of colloidal lead selenide (PbSe) quantum dot (QD) thin film field-effect transistors (FETs). PbSe QDs are chemically treated with sodium sulfide (Na2S) and coated with amorphous alumina (a-Al2O3) by atomic layer deposition (ALD) to obtain high mobility, air-stable FETs with a strongly gate-dependent conductivity. SPCM reveals a long pho...

In this paper, a novel efficient method for optimizing multi-output majority gate based designs is proposed. Majority gate is a fundamental Boolean operator in some nano-scale technologies such as quantum-dot cellular automata (QCA). As a result, the design optimization must be directly implemented on majority gates instead of optimizing the design for AND–OR gates. In some other nanotechnologi...

Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) in high frequency applications where switching power losses are dominant. They can be paralleled b...

This article analyses the racialization of discourses about national identities, and explores implications for populations racialized as white. Two extensive datasets have been brought together, spanning a decade 560 interviews, to explore discursive interplay, oppositional nature relationality majority minority claims belonging. We demonstrate that identity are constructed discursively from po...