نتایج جستجو برای: microwave field effect transistor

تعداد نتایج: 2380861  

2013
Andreas G. Andreou

The Field Effect Transistor (FET) is today the basic element of Very Large ScaIe Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types of FETs are the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), the MEtal Semiconductor Field Effect Transistors (MESFETs) and the MOdulation Doped Field Effect Transis...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی اصفهان - دانشکده برق و کامپیوتر 1387

تمام مدارات الکترونیکی غیرخطی هستند، این یک واقعیت پایه در الکترونیک است. فرض خطی بودن که زیربنای اکثر تیوری های مدرن مداری امروزی را تشکیل میدهد، در واقعیت یک نوع تقریب بشمار می آید. بعضی از مدارات مانند تقویت کننده های سیگنال کوچک در اصل به صورت ضعیف غیرخطی هستند، با این حال در مدار به صورت المان های خطی درنظر گرفته می شوند. گونه ای دیگر از مدارات مانند چندبرابر کننده های فرکانسی از این قابلی...

2017
Y Iguchi Y Nii Y Onose

The control of physical properties by external fields is essential in many contemporary technologies. For example, conductance can be controlled by a gate electric field in a field effect transistor, which is a main component of integrated circuits. Optical phenomena induced by an electric field such as electroluminescence and electrochromism are useful for display and other technologies. Contr...

2014
Alexander R. Katko John P. Barrett Steven A. Cummer

Articles you may be interested in Tunable microwave impedance matching to a high impedance source using a Josephson metamaterial Appl. Ultra-broadband electromagnetically induced transparency using tunable self-asymmetric planar metamaterials Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors Appl. Depletion mode GaAs metal–oxide–semiconductor fie...

Journal: :Chemical communications 2012
Hiroko Yamada Chika Ohashi Tatsuya Aotake Shuhei Katsuta Yoshihito Honsho Hiroo Kawano Tetsuo Okujima Hidemitsu Uno Noboru Ono Shu Seki Ken-ichi Nakayama

Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8-0.9...

2000
Andrei Grebennikov

Asimple analytic method for transistor oscillator design has been developed. This technique defines explicit expressions for optimum values of feedback elements and load through bipolar transistor z-parameters. Such an approach is useful for practical optimization of a series feedback microwave bipolar oscillator. Microwave oscillator design in general represents a complex problem. Depending on...

Journal: :journal of advances in computer research 0
meysam mohammadi department of computer engineering, ayatollah amoli branch, islamic azad university, amol, iran yavar safaei mehrabani independent researcher

full adder cell is often placed in the critical path of other circuits. therefore it plays an important role in determining the entire performance of digital system. moreover, portable electronic systems rely on battery and low-power design is another concern. in conclusion it is a vital task to design high-performance and low-power full adder cells. since delay opposes against power consumptio...

Journal: :Electrochemical science advances 2022

Abstract Field‐effect transistors have strong applications in biosensing field from pH and glucose monitoring to genomics, proteomics, cell signaling assays, biomedical diagnostics general. Notable advantages are the high sensitivity (thanks intrinsic amplification), quick response (useful for real‐time monitoring), suitability miniaturization, compact portable read‐out systems. The initial con...

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