Microphotoluminescence of low-density GaN/AlxGa1−xN quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify...

We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.

in this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled inas/gaas quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. the microcavity wafer sample is grown by molecular beam epitaxy (mbe) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication ...

We have investigated the diameter dependence of the exciton luminescence linewidth in individual single-walled carbon nanotubes (SWNTs) by means of microphotoluminescence (μ-PL) spectroscopy. The lineshapes of μ-PL spectra for single SWNTs suspended on a patterned Si substrate at room temperature can be fitted by single Lorentzian functions. It is found that the μ-PL linewidth depends strongly ...

We present the fabrication and characterization of high-quality-factor (Q) Si3N4 photonic crystal nanobeam cavities at visible wavelengths for coupling to nitrogen-vacancy centers in a cavity QED system. Confocal microphotoluminescence analysis of the nanobeam cavities demonstrates quality factors up to Q ~ 55,000, which are limited by the resolution of our grating spectrometer. This is a 1-ord...

InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by ...