Abstract A four-quadrant analog multiplier using a novel type of GaAs transistor is presented. This device, called 2-D MESFET, is dedicated to low power and high speed applications[1],[2]. A special architecture for the multiplier was designed by taking advantage of the dual-gate structure of the 2-D MESFET. The circuit relies on the square algebraic identity [8], with the squaring operation re...

We present a compact single monolithic microwave integrated circuit (MMIC) transmitter module for four-channel RF/optical subcarrier multiplexed (OSCM) communication applications. The developed module consists of one fully monolithic four-channel OSCM transmitter integrated circuit (IC) and four coupled-line filters. The MMIC is designed and implemented in a commercial 0.6m GaAs MESFET process ...

A modified genetic algorithm is presented for parameter extraction of small signal equivalent of microwave power GaAs MESFET. A new approach of genetic algorithm-based model in the paper is applied to determine the equivalent circuit elements of GaAs MESFET directly from measured S-parameters biased in the active region. The results of calculation show that the method presented is suitable for ...

This paper describes a high-speed GaAs MESFET digital IC design for optical communication systems. We propose novel circuit configurations of a selector and a static delayed flip-flop which are key elements to perform high-speed digital functions. Employing these new design, the selector IC and static decision IC fabricated with 0.12-μm GaAs MESFET operated up to 44 Gbit/s and 22 Gbit/s, respec...

A 1.1-GHz fully integrated GaAs MESFET active inductor is presented in this paper. Both the inductance and loss resistance are tunable with the inductance independent of series loss tuning. The measured loss resistance is tunable over a 10to +15range with a corresponding change in inductance of less than 10% at 100 MHz and less than 4% for frequencies above 500 MHz. The inductance is tunable fr...

-In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion effciency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically iqjection-lock...

i ABSTRACT The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. T...

This work evaluates the features of a galliumarsenide E/D MESFET process in which a 32-b RISC microprocessor was implemented. The design methodology and architecture of this prototype CPU are described. The performance sensitivity of the microprocessor and other large circuit blocks to different process parameters is analyzed, and recommendations for future process features, circuit approaches,...