Multilayer ferroelectric and ferromagnetic thin films were fabricated with the following composition and structure: La0.67Sr0.33MnOx /~Pb, La!~Ca, Ti!O3 ~LSMO/PLCT! and ~Pb, La!~Ca, Ti!O3 /La0.67Sr0.33MnOx ~PLCT/LSMO!, with an intention of creating a device of new concept. The films were fabricated using metalorganic deposition. The LSMO/PLCT structured films exhibit the ferroelectric propertie...

We study the magnetic properties of an epitaxial growth bilayer composed of ferromagnetic La0.7Sr0.3MnO3 (LSMO) and paramagnetic LaNiO3 (LNO) on SrTiO3 (STO) substrates. We find that the stack order of the bilayer heterostructure plays a key role in the interfacial coupling strength, and the coupling at the LSMO(top)/LNO(bottom) interface is much stronger than that at the LNO(top)/LSMO(bottom)....

Epitaxial La0:6Sr0:4MnO3 (LSMO) thin films were grown by pulsed laser deposition. Relationships between magnetic properties of LSMO epitaxial thin films and ablation conditions such as ablated spot area and total incident laser energy in a pulsed laser deposition technique were studied. Ablated spot area was controlled by changing the focus lens position and total laser energy. Epitaxial growth...

The effects of YBa2Cu3O72d ~YBCO! cap layers on the magnetic and electronic properties of La0.7Sr0.3MnO3 ~LSMO! underlayers was determined by x-ray magnetic circular dichroism and x-ray absorption spectroscopy techniques. The YBCO caps alter the LSMO in a way that effectively decreases the concentration of La at the LSMO/YBCO interface. © 2000 American Institute of Physics. @S0021-8979~00!62908-0#

(La,Sr)MnO3 (LSMO) nanolayers with various crystallographic textures were grown on the sapphire substrate with and without In2O3 epitaxial buffering. The LSMO nanolayer with In2O3 epitaxial buffering has a (110) preferred orientation. However, the nanolayer without buffering shows a highly (100)-oriented texture. Detailed microstructure analyses show that the LSMO nanolayer with In2O3 epitaxial...

La0.7Sr0.3MnO3 0.5 : ZnO 0.5 nanocomposite thin films were deposited on c-cut sapphire substrates via pulsed laser deposition. The as-grown films were composed of fine grains of 20–50 nm size. The epitaxial orientation relationships between the La0.7Sr0.3MnO3 LSMO and the sapphire was 111 LSMO/ / 0003 Al2O3 and 112̄ LSMO/ / 101̄0 Al2O3. A low field magnetoresistance LFMR of 12% was achieved at an...

Nanosized La0.7Sr0.3MnO3 /Pr0.5Sr0.5MnO3 ~LSMO12xPSMOx) ceramic composites are prepared using solid-sate sintering. Their microstructural, electroand magnetotransport properties are characterized by means of various techniques. It is found that the antiferromagnetic/ferromagnetic coupling between PSMO/LSMO at low temperature and the weak ferromagnetic order of PSMO at high temperature results i...

Epitaxial growth of ${\mathrm{Hf}}_{0.5}{\mathrm{Zr}}_{0.5}{\mathrm{O}}_{2}$ (HZO) thin films allows for the stabilization metastable orthorhombic phase with robust ferroelectric properties. So far, is most commonly stabilized on perovskite substrates upon insertion a buffer layer ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO); however, little known about role played...

A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series...

The La0.67Sr0.33MnO3 /BaFe11.3~ZnSn!0.7O19 ~LSMO/BaM! composites have been prepared by cosintering the LSMO and the BaM powders. The microstructural, magnetic, and magnetoresistive ~MR! properties of those systems were systematically studied. Due to the magnetic coupling between the LSMO ~a soft magnet metal! and BaM ~a hard magnet insulator! grains, the low-field MR sensitivity was reduced and...