This paper presents results of a systematic investigation to characterize the sealing of micromachined cavities using chemical vapor deposition (CVD) methods. We have designed and fabricated a large number and variety of surface-micromachined test structures with different etch-channel dimensions. Each cavity is then subjected to a number of sequential CVD deposition steps with incremental thic...

An overview is given of the modeling of the hydrodynamics, transport phenomena and chemical reactions in single-wafer LPCVD reactors, both at the macroscopic (reactor-scale) and a t the microscopic (feature-scale) level. Examples of modeling results f o r single-wafer silicon LPCVD from silane and tungsten LPCVD from tungsten hexafluoride and hydrogen a r e presented and comparisons a r e made ...

Few papers investigated the electrical properties of interlevel high temperature oxides low pressure chemically vapour deposited (LPCVD HTO) Si02. Silicon dioxide obtained by the surface reaction between SiH,Cl, and N,O at 900°C on LPCVD polysilicon shows lower electrical conductivity in comparison to SiO, thermally grown on polysilicon. It was demonstrated a FowlerNordheim mechanism for the el...

Ta2O5 films of 10-150 nm thickness were prepared by oxygen-assisted pyrolytic LPCVD at 450-490°C from tantalum penta ethoxide and 0 2 with N2 diluent. Silicon wafers 150 mm in diameter were used as substrates with a novel LPCVD reactor. The films were annealed in dry 0 2 a t 700-800°C. Compositional, structural, and electrical evaluations demonstrate that these uniform, pure, and conformal Ta2O...

LPCVD is a process used in the manufacturing of the deposition of thin films on semiconductors usually ranging from a few nanometers to many micrometers. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage. These films include a variety of materials including polysilicon for gate contacts, thick oxides used for isolation, doped oxides for global...

High crystalline quality thick ?-Ga 2 O 3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial thin films grown Sn-doped (010) and (001) substrates by LPCVD with fast rate vary...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

A new polysilicon bridge-slider structure (Fig. 1), in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance...